Inventor profile of:

Thomas Happ

City:

Dresden

Country:

Germany

Published Applications:

32

Last publication date:

2014-03-06

Top Assignees for applications by Thomas Happ

The entities that hold a legal rights for patent applications filed by inventor Happ Thomas:

Recent patent applications by Happ Thomas

Thomas Happ from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-03-06
US20140065787A1
Electricity

Integrated circuit including vertical diode

#2 | 2010-03-04
US20100058018A1
Physics

Memory scheduler for managing maintenance operations in a resistive memory in response to a trigger condition

#3 | 2010-02-25
US20100044669A1
Electricity

Integrated circuit including memory cell having cup-shaped electrode interface

#4 | 2010-02-11
US20100032635A1
Electricity

Array of low resistive vertical diodes and method of production

#5 | 2010-02-04
US20100027325A1
Physics

Integrated circuit including an array of memory cells and method

#6 | 2010-01-07
US20100002498A1
Physics

Integrated circuit for programming a memory cell

#7 | 2009-12-31
US20090321706A1
Electricity

Resistive memory devices with improved resistive changing elements

#8 | 2009-12-24
US20090316473A1
Electricity

Integrated circuit including vertical diode

#9 | 2009-12-17
US20090310401A1
Physics

Integrated circuit including a memory element programmed using a seed pulse

#10 | 2009-12-10
US20090303780A1
Physics

Integrated circuit including an array of diodes coupled to a layer of resistance changing material

#11 | 2009-09-24
US20090237983A1
Electricity

Integrated circuit including memory element doped with dielectric material

#12 | 2009-08-20
US20090206316A1
Electricity

Integrated circuit including U-shaped access device

#13 | 2009-08-20
US20090206315A1
Electricity

Integrated circuit including U-shaped access device

#14 | 2009-08-13
US20090200534A1
Electricity

Method for fabrication of polycrystalline diodes for resistive memories

#15 | 2009-08-06
US20090199043A1
Physics

ERROR CORRECTION IN AN INTEGRATED CIRCUIT WITH AN ARRAY OF MEMORY CELLS

#16 | 2009-08-06
US20090196094A1
Physics

Integrated circuit including electrode having recessed portion

#17 | 2009-08-06
US20090196093A1
Physics

STACKED DIE MEMORY

#18 | 2009-07-23
US20090185411A1
Electricity

INTEGRATED CIRCUIT INCLUDING DIODE MEMORY CELLS

#19 | 2009-06-25
US20090161416A1
Physics

Optimized phase change write method

#20 | 2009-06-25
US20090161415A1
Physics

Integrated circuit for setting a memory cell based on a reset current distribution

#21 | 2009-06-18
US20090154227A1
Physics

Integrated circuit including diode memory cells

#22 | 2009-06-18
US20090154226A1
Physics

Integrated circuit including quench devices

#23 | 2009-06-11
US20090147563A1
Physics

Integrated circuit for programming a memory element

#24 | 2009-06-11
US20090146131A1
Electricity

Integrated Circuit, and Method for Manufacturing an Integrated Circuit

#25 | 2009-04-02
US20090087965A1
Electricity

STRUCTURE AND METHOD FOR MANUFACTURING PHASE CHANGE MEMORIES

#26 | 2009-02-26
US20090052232A1
Physics

Method for fabricating an integrated circuit including memory element with spatially stable material

#27 | 2009-02-26
US20090050870A1
Electricity

Integrated circuit including memory element with spatially stable material

#28 | 2009-02-19
US20090046499A1
Physics

INTEGRATED CIRCUIT INCLUDING MEMORY HAVING LIMITED READ

#29 | 2009-02-19
US20090046498A1
Electricity

Integrated circuit including memory having reduced cross talk

#30 | 2009-02-19
US20090045385A1
Electricity

Integrated circuit including memory element with high speed low current phase change material

#31 | 2009-01-01
US20090003046A1
Physics

Memory with dynamic redundancy configuration

#32 | 2008-07-03
US20080158942A1
Electricity

MEMORY HAVING STORAGE LOCATIONS WITHIN A COMMON VOLUME OF PHASE CHANGE MATERIAL

InventorID:

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