Sunnyvale, California
United States
22
2008-07-01
22
2008-07-01
These are the the leading inventors for applications assigned to FASL LLC:
FASL LLC based in Sunnyvale, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Recessed channel with separated ONO memory device
#2 | 2006-08-29 ✅ Patent 7,098,546 granted on 2006-08-29Alignment marks with salicided spacers between bitlines for alignment signal improvement
#3 | 2006-07-11 ✅ Patent 7,074,677 granted on 2006-07-11Memory with improved charge-trapping dielectric layer
#4 | 2006-07-06 ✅ Patent 7,453,116 granted on 2008-11-18Semiconductor memory device and method of fabricating the same
#5 | 2006-06-27 ✅ Patent 7,067,377 granted on 2006-06-27Recessed channel with separated ONO memory device
#6 | 2006-05-02 ✅ Patent 7,037,780 granted on 2006-05-02Semiconductor memory device and method of fabricating the same
#7 | 2006-03-28 ✅ Patent 7,019,366 granted on 2006-03-28Electrostatic discharge performance of a silicon structure and efficient use of area with electrostatic discharge protective device under the pad approach and adjustment of via configuration thereto to control drain junction resistance
#8 | 2006-03-07 ✅ Patent 7,009,887 granted on 2006-03-07Method of determining voltage compensation for flash memory devices
#9 | 2006-01-10 ✅ Patent 6,984,563 granted on 2006-01-10Floating gate semiconductor component and method of manufacture
#10 | 2005-12-27 ✅ Patent 6,979,577 granted on 2005-12-27Method and apparatus for manufacturing semiconductor device
#11 | 2005-12-20 ✅ Patent 6,977,195 granted on 2005-12-20Test structure for characterizing junction leakage current
#12 | 2005-11-29 ✅ Patent 6,969,886 granted on 2005-11-29ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices
#13 | 2005-10-25 ✅ Patent 6,958,511 granted on 2005-10-25Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen
#14 | 2005-10-18 ✅ Patent 6,955,965 granted on 2005-10-18Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device
#15 | 2005-10-13 ✅ Patent 7,253,046 granted on 2007-08-07Semiconductor memory device and manufacturing method thereof
#16 | 2005-09-27 ✅ Patent 6,949,481 granted on 2005-09-27Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device
#17 | 2005-09-27 ✅ Patent 6,949,433 granted on 2005-09-27Method of formation of semiconductor resistant to hot carrier injection stress
#18 | 2005-09-13 ✅ Patent 6,944,057 granted on 2005-09-13Method to obtain temperature independent program threshold voltage distribution using temperature dependent voltage reference
#19 | 2005-06-28 ✅ Patent 6,912,163 granted on 2005-06-28Memory device having high work function gate and method of erasing same
#20 | 2005-04-26 ✅ Patent 6,884,681 granted on 2005-04-26Method of manufacturing a semiconductor memory with deuterated materials
#21 | 2005-03-29 ✅ Patent 6,873,022 granted on 2005-03-29Semiconductor device and method for manufacturing the same
#22 | 2005-02-22 ✅ Patent 6,859,393 granted on 2005-02-22Ground structure for page read and page write for flash memory
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