Inventor profile of:

Nian Yang

City:

Mountain View, California

Country:

United States

Published Applications:

48

Last publication date:

2024-04-11

Top Assignees for applications by Nian Yang

The entities that hold a legal rights for patent applications filed by inventor Yang Nian:

Recent patent applications by Yang Nian

Nian Yang from Mountain View, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-04-11
US20240118814A1
Physics

SSD auxiliary battery power for handling ungraceful shutdown with host

#2 | 2023-06-29
US20230205429A1
Physics

SSD auxiliary battery power for handling ungraceful shutdown with host

#3 | 2022-03-03
US20220068423A1
Physics

Level dependent error correction code protection in multi-level non-volatile memory

#4 | 2021-08-26
US20210263821A1
Physics

Variable read scan for solid-state storage device quality of service

#5 | 2020-08-13
US20200258582A1
Physics

Pre-program read to counter wordline failures

#6 | 2020-03-19
US20200090759A1
Physics

Pre-program read to counter wordline failures

#7 | 2016-08-25
US20160246672A1
Physics

Method and apparatus for configuring a memory device

#8 | 2016-03-17
US20160078960A1
Physics

METHOD AND APPARATUS FOR WRITING DATA TO NON-VOLATILE MEMORY

#9 | 2015-09-01
US14558172
Physics

Power management for nonvolatile memory array

#10 | 2015-03-19
US20150082120A1
Physics

Selective in-situ retouching of data in nonvolatile memory

#11 | 2015-01-06
US14276830
Physics

Power management for nonvolatile memory array

#12 | 2013-06-11
US13090981
-

Flash memory programming power reduction

#13 | 2013-01-22
US11229529
-

Flash memory programming with data dependent control of source lines

#14 | 2011-06-07
US11229667
-

Flash memory programming power reduction

#15 | 2010-04-15
US20100090337A1
Electricity

System and method for multi-layer global bitlines

#16 | 2009-12-15
US10823970
-

Semiconductor device having a pad metal layer and a lower metal layer that are electrically coupled, whereas apertures are formed in the lower metal layer below a center area of the pad metal layer

#17 | 2009-11-05
US20090273998A1
Physics

Bitcell current sense device and method thereof

#18 | 2009-08-20
US20090206386A1
Electricity

Decoding system capable of charging protection for flash memory devices

#19 | 2009-06-11
US20090147587A1
Physics

Circuit pre-charge to sense a memory line

#20 | 2009-05-07
US20090119447A1
Physics

Controlled bit line discharge for channel erases in nonvolatile memory

#21 | 2009-05-07
US20090116289A1
Physics

Decoding system capable of reducing sector select area overhead for flash memory

#22 | 2009-04-23
US20090106481A1
Physics

Hybrid flash memory device

#23 | 2009-02-19
US20090045445A1
Electricity

Capacitor structure used for flash memory

#24 | 2008-12-25
US20080316830A1
Physics

Compensation method to achieve uniform programming speed of flash memory devices

#25 | 2008-06-26
US20080151639A1
Physics

Flash memory device with external high voltage supply

#26 | 2008-06-19
US20080144391A1
Physics

Methods and systems for memory devices

#27 | 2008-06-19
US20080144390A1
Physics

Drain voltage regulator

#28 | 2008-06-12
US20080136381A1
Physics

Method to provide a higher reference voltage at a lower power supply in flash memory devices

#29 | 2008-06-05
US20080130371A1
Physics

Method and apparatus for high voltage operation for a high performance semiconductor memory device

#30 | 2008-05-29
US20080122413A1
Physics

METHOD AND APPARATUS FOR VERSATILE HIGH VOLTAGE LEVEL DETECTION WITH RELATIVE NOISE IMMUNITY

#31 | 2008-04-01
US11212614
-

Voltage regulator with less overshoot and faster settling time

#32 | 2007-12-20
US20070291550A1
Physics

Method and apparatus for high voltage operation for a high performance semiconductor memory device

#33 | 2007-12-13
US20070286006A1
Physics

Method and apparatus for drain pump operation

#34 | 2007-12-13
US20070284609A1
Physics

METHOD AND APPARATUS FOR DRAIN PUMP POWER CONSERVATION

#35 | 2007-08-21
US11250913
-

Voltage supply circuit for memory array programming

#36 | 2007-04-05
US20070076513A1
Physics

Decoder for memory device with loading capacitor

#37 | 2007-03-27
US11229530
-

Charge-sharing technique during flash memory programming

#38 | 2007-03-22
US20070064480A1
Physics

Multi-bit flash memory device having improved program rate

#39 | 2007-03-22
US20070064464A1
Physics

High performance flash memory device capable of high density data storage

#40 | 2007-02-15
US20070037371A1
Electricity

Method of forming gate electrode structures

#41 | 2006-05-09
US10896651
-

Method of programming a flash memory device using multilevel charge storage

#42 | 2006-03-28
US10758173
-

Electrostatic discharge performance of a silicon structure and efficient use of area with electrostatic discharge protective device under the pad approach and adjustment of via configuration thereto to control drain junction resistance

#43 | 2006-02-02
US20060023511A1
Physics

Flash memory unit and method of programming a flash memory device

#44 | 2006-01-12
US20060007752A1
Physics

Method of improving erase voltage distribution for a flash memory array having dummy wordlines

#45 | 2005-11-08
US10679179
-

Circuit and technique for accurately sensing low voltage flash memory devices

#46 | 2005-07-14
US20050151265A1
Electricity

Efficient use of wafer area with device under the pad approach

#47 | 2005-05-24
US10678446
-

Efficient and accurate sensing circuit and technique for low voltage flash memory devices

#48 | 2005-03-01
US10429140
-

Structure and method for a two-bit memory cell

InventorID:

1106370 ⎘