121369 ⎘
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state Controlling or regulating
Sub-classes:STRUCTURES WITH BORON- AND GALLIUM-DOPED SILICON GERMANIUM LAYERS AND METHODS AND SYSTEMS FOR FORMING SAME
#2Method for manufacturing transition metal chalcogenide and transition metal chalcogenide prepared thereby
#3Method for depositing low temperature phosphorous-doped silicon
#4SILICON CARBIDE CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHOD THEREOF
#5Gallium nitride light emitting devices on diamond
#6Laser media with controlled concentration profile of active laser ions and method of making the same
#7System for improved pressure control in horizontal diffusion furnace scavenger system for controlling oxide growth
#8Methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses
#9Deposition apparatuses
#10Gallium nitride light emitting devices on diamond
#11Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material