ClassID:

209302

H01L2221/1021 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by; Applying interconnections to be used for carrying current between separate components within a device; Formation and after-treatment of dielectrics; Forming openings in dielectrics for dual damascene structures Pre-forming the dual damascene structure in a resist layer

Recent Application in this class:
#1
20250309172
2025-10-02

Semiconductor Device and Method of Forming an Embedded Redistribution Layer

#2
20250140611
2025-05-01

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

#3
20240347383
2024-10-17

Selective recessing to form a fully aligned via

#4
20230386900
2023-11-30

Method for fabricating semiconductor device with contact structure

#5
20230317663
2023-10-05

Semiconductor Device and Method of Forming an Embedded Redistribution Layer

#6
20220181205
2022-06-09

Selective recessing to form a fully aligned via

#7
20210082758
2021-03-18

Selective recessing to form a fully aligned via

#8
20200365451
2020-11-19

Methods of forming interconnect structures using via holes filled with dielectric film

#9
20190148146
2019-05-16

Method of forming semiconductor structure

#10
20180315654
2018-11-01

Selective recessing to form a fully aligned via

#11
20180315653
2018-11-01

Selective recessing to form a fully aligned via

#12
20180040510
2018-02-08

Selective recessing to form a fully aligned via

#13
20170229345
2017-08-10

Method of fabricating dual damascene structure

#14
20160197012
2016-07-07

Semiconductor devices and methods of manufacture thereof

#15
20160172196
2016-06-16

Method of semiconductor integrated circuit fabrication

#16
20130178068
2013-07-11

DUAL DAMASCENE PROCESS AND APPARATUS

#17
20130026639
2013-01-31

Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme

#18
20120214311
2012-08-23

Process of multiple exposures with spin castable films

#19
20120115303
2012-05-10

Method of fabricating damascene structures

#20
20120108054
2012-05-03

Dual damascene copper process using a selected mask

#21
20110290759
2011-12-01

Pattern formation method

#22
20110204523
2011-08-25

Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme

#23
20110117723
2011-05-19

Nano imprint technique with increased flexibility with respect to alignment and feature shaping

#24
20100311241
2010-12-09

THREE-STATE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

#25
20100301449
2010-12-02

METHODS AND APPARATUS FOR FORMING LINE AND PILLAR STRUCTURES FOR THREE DIMENSIONAL MEMORY ARRAYS USING A DOUBLE SUBTRACTIVE PROCESS AND IMPRINT LITHOGRAPHY

#26
20090166682
2009-07-02

Methods and apparatus for forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography

#27
20090104566
2009-04-23

Process of multiple exposures with spin castable film

#28
20090023098
2009-01-22

Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same

#29
20080020565
2008-01-24

Dual damascence copper process using a selected mask

#30
20080003818
2008-01-03

Nano imprint technique with increased flexibility with respect to alignment and feature shaping

#31
20070275556
2007-11-29

Fabrication method

#32
20070212872
2007-09-13

Single mask process for variable thickness dual damascene structures, other grey-masking processes, and structures made using grey-masking

#33
20070077757
2007-04-05

Method of forming metal wiring in semiconductor device

#34
20070049005
2007-03-01

Method for forming dual damascene pattern in semiconductor manufacturing process

#35
20060197228
2006-09-07

SINGLE MASK PROCESS FOR VARIABLE THICKNESS DUAL DAMASCENE STRUCTURES, OTHER GREY-MASKING PROCESSES, AND STRUCTURES MADE USING GREY-MASKING

#36
20060141773
2006-06-29

Method of forming metal line in semiconductor device

#37
20060014381
2006-01-19

Method for forming interconnection line in semiconductor device using a phase-shift photo mask

#38
14992515
2016-08-09

Via patterning using multiple photo multiple etch