208216 ⎘
Semiconductor device and method of manufacturing the same
#602Silicon carbide semiconductor device
#603Integrated electronic device and method for manufacturing thereof
#604IGBT STRUCTURE ON SIC FOR HIGH PERFORMANCE
#605Semiconductor device and semiconductor device manufacturing method
#606Semiconductor device and method for manufacturing the same
#607Vertical semiconductor device
#608Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor device
#609Silicon carbide semiconductor device and method for manufacturing same
#610Semiconductor device and method of manufacturing same
#611Semiconductor device having super-junction structures
#612Power device configured to reduce electromagnetic interference (EMI) noise
#613Wide bandgap insulated gate semiconductor device
#614Semiconductor device and method for manufacturing same
#615Method for manufacturing a semiconductor device with step-shaped edge termination
#616Semiconductor device including a vertical edge termination structure and method of manufacturing
#617Semiconductor device
#618High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#619Method of manufacturing a silicon carbide semiconductor device
#620Semiconductor device and method of manufacturing the same
#621Semiconductor structure and manufacturing method of the same
#622IGBT and diode
#623Method for manufacturing semiconductor device
#624Chip diode and diode package
#625Semiconductor device
#626Chip diode and method for manufacturing same
#627Semiconductor device and semiconductor device manufacturing method
#628Semiconductor device and semiconductor device manufacturing method
#629Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing
#630Semiconductor device including an electric field buffer layer and method for manufacturing same
#631Semiconductor device and method of manufacturing the semiconductor device
#632Silicon carbide semiconductor device
#633Semiconductor device including undulated profile of net doping in a drift zone
#634Structures and methods with reduced sensitivity to surface charge
#635Semiconductor device and method of manufacturing the same
#636Edge termination configurations for high voltage semiconductor power devices
#637Semiconductor device and manufacturing method thereof
#638MOS transistor operated as OTP cell with gate dielectric operating as an e-fuse element
#639Semiconductor device
#640Bipolar semiconductor device and method of manufacturing thereof
#641Semiconductor device and method for fabricating the same
#642Lateral double-diffused metal-oxide-semiconudctor transistor device and layout pattern for LDMOS transistor device
#643Superjunction structures for power devices
#644Schottky diode with buried layer in GaN materials
#645Semiconductor devices
#646Semiconductor device
#647POWER SEMICONDUCTOR DEVICE
#648Semiconductor device
#649Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage
#650Semiconductor device including a MOSFET and having a super-junction structure
#651Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device
#652Semiconductor device having polysilicon plugs with silicide crystallites
#653Semiconductor device with selectively etched surface passivation
#654Semiconductor device which suppresses fluctuations in breakdown voltage
#655Semiconductor device and method for manufacturing same
#656Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device
#657Silicon carbide semiconductor device and method for producing the same
#658Semiconductor device and fabrication method of semiconductor device
#659Semiconductor device
#660High-voltage vertical power component
#661ESD protection device
#662Semiconductor device
#663Vertical gallium nitride power device with breakdown voltage control
#664Semiconductor array having temperature-compensated breakdown voltage
#665Semiconductor device and method for forming a semiconductor device
#666Semiconductor device and method for forming a semiconductor device
#667Sawtooth electric field drift region structure for power semiconductor devices
#668Power semiconductor device
#669Superjunction structures for power devices and methods of manufacture
#670Semiconductor device
#671Trench MOSFET and method for fabricating the same
#672Semiconductor device and method of manufacturing the same
#673Semiconductor device with a passivation layer
#674Semiconductor device including a MOSFET
#675Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
#676Lateral diffusion metal oxide semiconductor (LDMOS) device with tapered drift electrode
#677Semiconductor device having a surface with ripples
#678Schottky diode
#679Semiconductor component having a transition region
#680Semiconductor device
#681Insulated gate bipolar transistor with high emitter gate capacitance
#682Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devices
#683High-voltage field-effect transistor having multiple implanted layers
#684Semiconductor devices and methods of manufacture
#685Semiconductor device and method for producing the same
#686ESD protection element
#687Electric field gap device and manufacturing method
#688Semiconductor diode device
#689Semiconductor device
#690Semiconductor device with termination region having floating electrodes in an insulating layer
#691Three-terminal variable capacitor
#692Semiconductor device including a drift zone and a drift control zone
#693Semiconductor device having breakdown voltage enhancement structure
#694Resin-sealed semiconductor device and method of manufacturing the same
#695Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device
#696Semiconductor device
#697Semiconductor device having a plurality of electric field relaxation layers and method for manufacturing same
#698Method of fabricating a gallium nitride P-i-N diode using implantation
#699SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF
#700Semiconductor device
#701Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
#702Semiconductor device
#703Semiconductor device
#704Power device including a field stop layer
#705Power superjunction MOSFET device with resurf regions
#706Semiconductor device
#707Silicon carbide semiconductor device
#708TID hardened and single event transient single event latchup resistant MOS transistors and fabrication process
#709Semiconductor device
#710Semiconductor devices
#711Chip diode and diode package
#712Active Tiling Placement for Improved Latch-up Immunity
#713Semiconductor device
#714High voltage fast recovery trench diode
#715Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
#716Insulated gate semiconductor device and method for manufacturing the same
#717Semiconductor device and method of fabricating the same
#718Semiconductor device
#719Semiconductor device including an edge area and method of manufacturing a semiconductor device
#720Schottky barrier diode and method of manufacturing the same
#721Vertical GaN power device with breakdown voltage control
#722Semiconductor device
#723Aluminum gallium nitride etch stop layer for gallium nitride based devices
#724Semiconductor device and semiconductor device manufacturing method
#725Semiconductor device
#726Silicon carbide semiconductor device having layer covering corner portion of depressed portion
#727Semiconductor device and method of manufacturing the same
#728Semiconductor device
#729Semiconductor device and method for forming the same
#730MOSFET device
#731Semiconductor device and method of manufacturing the same
#732Semiconductor structures with thinned junctions and methods of manufacture
#733Insulated gate type semiconductor device and method for fabricating the same
#734Diffused junction termination structures for silicon carbide devices
#735Power device and method for manufacturing the same
#736Semiconductor device and method for fabricating semiconductor device
#737Semiconductor device
#738Semiconductor device with a passivation layer
#739Semiconductor heterostructure diodes
#740LDMOS device with step-like drift region and fabrication method thereof
#741Stress enhanced high voltage device
#742Manufacturing method of silicon carbide semiconductor device
#743Trench schottky diode
#744Semiconductor device and method for manufacturing same
#745Power semiconductor device
#746High voltage field balance metal oxide field effect transistor (FBM)
#747Semiconductor device and method of fabricating same
#748Semiconductor device and method for manufacturing same
#749Semiconductor device with charge carrier lifetime reduction means
#750Semiconductor device and method for manufacturing same
#751Semiconductor device and method of manufacturing the same
#752Silicon carbide vertical field effect transistor
#753Semiconductor device
#754Method of forming a self-aligned charge balanced power DMOS
#755Semiconductor device with selectively etched surface passivation
#756Semiconductor device with selectively etched surface passivation
#757Reverse Conducting IGBT
#758Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device
#759Adaptive charge balanced edge termination
#760Semiconductor device
#761Silicon carbide semiconductor device manufacturing method
#762Semiconductor device having a diffusion region
#763Semiconductor device
#764Semiconductor device and method of manufacturing the same
#765Semiconductor device with first and second field-effect structures and an integrated circuit including the semiconductor device
#766Semiconductor device with gate electrodes buried in trenches
#767Making ESD diode with P-S/D overlying N-well and P-EPI portion
#768Semiconductor device including a MOSFET and Schottky junction
#769MOSFET termination trench
#770Isolated device and manufacturing method thereof
#771Semiconductor device with edge termination and method for manufacturing a semiconductor device
#772Method of manufacturing semiconductor device by mounting and positioning a semiconductor die using detection marks
#773Semiconductor device having a variation lateral doping structure and method for manufaturing the same
#774Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit
#775Trench Schottky barrier diode and manufacturing method thereof
#776Surface (lateral) voltage-sustaining region with an insulator film containing conductive particles
#777Voltage-Sustaining Layer Consisting of Semiconductor and Insulator Containing Conductive Particles for Semiconductor Device
#778Method of fabricating a GaN P-i-N diode using implantation
#779Semiconductor device and fabricating method thereof
#780Field plate configuration of a semiconductor device
#781Semiconductor device
#782Edge termination for super junction MOSFET devices
#783Method for manufacturing silicon carbide semiconductor device
#784Aluminum gallium nitride etch stop layer for gallium nitride based devices
#785Semiconductor structure for an electronic interruptor power switch
#786Semiconductor apparatus
#787Trench type Schottky junction semiconductor device and manufacturing method thereof
#788Silicon carbide semiconductor device and method for manufacturing same
#789Schottky diode with buried layer in GaN materials
#790Method and system for floating guard rings in gallium nitride materials
#791Semiconductor device
#792Method of manufacturing silicon carbide semiconductor device
#793Semiconductor device and method of manufacturing the same
#794Vertical field effect transistor on oxide semiconductor substrate
#795Power MOSFET, an IGBT, and a power diode
#796Vertical semiconductor device comprising a resurf structure
#797Methods for fabricating anode shorted field stop insulated gate bipolar transistor
#798Semiconductor integrated circuit with guard ring
#799Insulated gate semiconductor device with optimized breakdown voltage, and manufacturing method thereof
#800Silicon carbide semiconductor device
#801SiC devices with high blocking voltage terminated by a negative bevel
#802Bipolar junction transistor with stair profile
#803Power semiconductor device and method for manufacturing same
#804Semiconductor device
#805Nanotube semiconductor devices and nanotube termination structures
#806Vertical IGBT adjacent a RESURF region
#807SEMICONDUCTOR DEVICE
#808Power device and method for manufacturing the same
#809Method of manufacturing a reverse blocking insulated gate bipolar transistor
#810Semiconductor device comprising bipolar and unipolar transistors including a concave and convex portion
#811Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
#812Semiconductor device
#813IGBT and diode
#814Active tiling placement for improved latch-up immunity
#815Manufacturing method of silicon carbide semiconductor device
#816PIN diode
#817High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#818Semiconductor device and integrated circuit including the semiconductor device
#819SiC devices with high blocking voltage terminated by a negative bevel
#820Semiconductor device, LED driving circuit, and apparatus for displaying an image
#821Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode
#822Superjunction structures for power devices and methods of manufacture
#823SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
#824Superjunction Structures for Power Devices and Methods of Manufacture
#825Superjunction structures for power devices and methods of manufacture
#826Junction Barrier Schottky diodes with current surge capability
#827Semiconductor heterostructure diodes
#828SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#829SCHOTTKY DIODE
#830Configuration and method to generate saddle junction electric field in edge termination
#831POWER SEMICONDUCTOR DEVICE
#832Transistor with A-face conductive channel and trench protecting well region
#833High breakdown voltage semiconductor rectifier
#834SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#835SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#836High-voltage semiconductor device
#837Compound semiconductor device, method for producing the same, and power supply
#838Wide-band-gap reverse-blocking MOS-type semiconductor device
#839Power semiconductor device
#840Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
#841Method of producing a semiconductor including two differently doped semiconductor zones
#842Semiconductor device and method for manufacturing the same
#843Method of forming a semiconductor device termination and structure therefor
#844Edge termination with improved breakdown voltage
#845Semiconductor structures with thinned junctions and methods of manufacture
#846Semiconductor device
#847Semiconductor power device having a super-junction structure
#848Mesa-type bidirectional Shockley diode
#849Transistors with high concentration of boron doped germanium
#850Semiconductor component with a space saving edge structure
#851Insulated gate type semiconductor device and method for fabricating the same
#852Insulated gate type semiconductor device and method for fabricating the same
#853Manufacturing method of semiconductor apparatus and semiconductor apparatus
#854Silicon carbide semiconductor device
#855Semiconductor device and method of making the same
#856Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures
#857Silicon carbide insulating gate type semiconductor device and fabrication method thereof
#858Semiconductor component including a lateral transistor component
#859POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#860Semiconductor device with peripheral base region connected to main electrode
#861Integrated electronic device with edge-termination structure and manufacturing method thereof
#862Semiconductor device and method for fabricating the same
#863Integrated electronic device and method for manufacturing thereof
#864Trench structures in direct contact
#865SEMICONDUCTOR DEVICE
#866Semiconductor device having lateral diode
#867Semiconductor integrated circuit with high withstand voltage element forming trench isolation on substrate
#868Insulated gate type semiconductor device and method for fabricating the same
#869Power semiconductor device
#870SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF
#871Power supply circuit having a semiconductor device including a MOSFET and a Schottky junction
#872ESD diode with PSD partially overlying P-Epi circumferential of PSD
#873SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#874SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#875Semiconductor device and method for manufacturing the same
#876Power semiconductor device
#877Silicon carbide semiconductor device
#878Semiconductor component with a trench edge termination
#879Silicon carbide semiconductor device and method of producing silicon carbide semiconductor device
#880Isolated transistor
#881Transistor with A-face conductive channel and trench protecting well region
#882Charge Balance Techniques for Power Devices
#883Semiconductor device
#884SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#885Semiconductor device
#886Semiconductor device and method of manufacturing the same
#887Power semiconductor device
#888Trench DMOS device with improved termination structure for high voltage applications
#889Trench MOS device with improved termination structure for high voltage applications
#890Devices containing permanent charge
#891Power semiconductor device and method of manufacturing the same
#892Semiconductor device
#893Semiconductor device manufacturing method
#894Method of manufacturing silicon carbide semiconductor device
#895CHARGE BALANCE POWER DEVICE AND MANUFACTURING METHOD THEREOF
#896Low voltage power supply
#897Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
#898Method of forming a self-aligned charge balanced power DMOS
#899Method of manufacturing silicon carbide semiconductor device
#900Semiconductor device and power conversion apparatus using the same