208216 ⎘
Semiconductor apparatus
#902Semiconductor heterostructure diodes
#903SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#904Semiconductor device and method for manufacturing the same
#905Split gate semiconductor device with curved gate oxide profile
#906High breakdown voltage semiconductor device having a resurf layer
#907Method of manufacturing a semiconductor device having vertical MOSFET
#908Semiconductor device
#909Insulated gate type semiconductor device and method for fabricating the same
#910Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device
#911Method for making a trench MOSFET with shallow trench structures
#912Semiconductor device and method of manufacturing the same
#913Semiconductor device and method for manufacturing the same
#914Semiconductor device and method for manufacturing the same
#915Power MOSFET comprising a plurality of columnar structures defining the charge balancing region
#916Semiconductor device including a MOSFET and a Schottky junction
#917Semiconductor device and manufacturing method of the same
#918IGBT and method of producing the same
#919Insulated gate type semiconductor device and method for fabricating the same
#920Nanotube semiconductor devices
#921Silicon carbide semiconductor device
#922Method of manufacturing silicon carbide semiconductor device
#923Semiconductor device, LED driving circuit, and apparatus for displaying an image
#924Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
#925Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area
#926Semiconductor device
#927MOSFET structure with guard ring
#928Insulated gate bipolar transistor
#929Semiconductor component including a lateral transistor component
#930Semiconductor device and method for fabricating the same
#931Semiconductor device and method of manufacturing the same
#932Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same
#933ESD protection element
#934Method of forming a low resistance semiconductor contact and structure therefor
#935Semiconductor device and method of manufacturing the same
#936Semiconductor ESD device and method of making same
#937Semiconductor device and wire bonding method
#938MOSFET devices and methods of making
#939Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
#940Semiconductor device
#941Semiconductor device and method of manufacturing the same
#942Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
#943Semiconductor device
#944Semiconductor heterostructure diodes
#945Isolated transistor
#946Silicon carbide semiconductor device
#947SEMICONDUCTOR DEVICE
#948Semiconductor device and manufacturing method thereof
#949Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power device
#950Devices containing permanent charge
#951Silicon carbide Zener diode
#952Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
#953Robust semiconductor device with an emitter zone and a field stop zone
#954Semiconductor device with semiconductor body and method for the production of a semiconductor device
#955Semiconductor structure with an electric field stop layer for improved edge termination capability
#956Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices
#957Semiconductor device and method of manufacturing the same
#958Semiconductor device and method for the production of a semiconductor device
#959Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
#960Semiconductor device and method of manufacturing the same
#961Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage
#962Mesa termination structures for power semiconductor devices including mesa step buffers
#963Charge balance techniques for power devices
#964Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same
#965SEMICONDUCTOR DEVICE
#966Insulated gate type semiconductor device and method for fabricating the same
#967Junction barrier Schottky diodes with current surge capability
#968Method of producing a low-voltage power supply in a power integrated circuit
#969Method of manufacturing semiconductor device
#970Method for manufacturing a semiconductor substrate including laser annealing
#971MOSFET STRUCTURE WITH GUARD RING
#972Semiconductor device with a semiconductor body and method for its production
#973Semiconductor device and semiconductor device manufacturing method
#974NEAR NATURAL BREAKDOWN DEVICE
#975Schottky barrier diode and method for using the same
#976Semiconductor device and method of manufacturing the same
#977Semiconductor device and method of manufacturing the same
#978Edge termination with improved breakdown voltage
#979Power semiconductor device
#980Semiconductor device
#981Silicon carbide semiconductor device including deep layer
#982Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device
#983Transistor with A-face conductive channel and trench protecting well region
#984Power semiconductor device and method for manufacturing same
#985Method of manufacturing semiconductor device
#986Semiconductor device including a resurf region with forward tapered teeth
#987Silicon carbide semiconductor device
#988Superjunction structures for power devices
#989Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
#990Semiconductor device and method of forming a semiconductor device
#991Semiconductor device having breakdown voltage maintaining structure and its manufacturing method
#992Silicon carbide bipolar semiconductor device
#993Semiconductor device having p-n column portion
#994Semiconductor device
#995Semiconductor device and method of fabricating semiconductor device
#996Power semiconductor device and manufacturing method of the same
#997Semiconductor apparatus
#998Silicon carbide semiconductor device having junction barrier schottky diode
#999Semiconductor device
#1000SEMICONDUCTOR DEVICE
#1001Method of manufacturing semiconductor devices
#1002SiC semiconductor having junction barrier schottky device
#1003SIC semiconductor having junction barrier Schottky diode
#1004Semiconductor device
#1005Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors
#1006Semiconductor component and method for producing it
#1007Semiconductor device having vertical MOSFET
#1008Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same
#1009Trenched semiconductor device
#1010Junction barrier schottky rectifiers having epitaxially grown P+-N methods of making
#1011Power semiconductor device
#1012Integrated high voltage power device having an edge termination of enhanced effectiveness
#1013Isolated junction field-effect transistor
#1014Silicon carbide semiconductor device
#1015High voltage LDMOS
#1016Method for manufacturing SiC semiconductor device
#1017Isolation and termination structures for semiconductor die
#1018Isolated quasi-vertical DMOS transistor
#1019Isolated transistor
#1020Semiconductor ESD device and method of making same
#1021Method of manufacturing a MOSFET structure
#1022Semiconductor device and method for manufacturing the same
#1023Semiconductor device
#1024Insulated gate type semiconductor device and method for fabricating the same
#1025Power semiconductor device
#1026Semiconductor device having first and second resurf layers
#1027Semiconductor component and method for producing the same
#1028Method for preventing the formation of dentrites in a semiconductor
#1029Semiconductor component having a transition region
#1030High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
#1031Semiconductor device
#1032Semiconductor device with a vertical MOSFET and method for manufacturing the same
#1033Semiconductor device
#1034Semiconductor component having a space saving edge structure
#1035Semiconductor device and method of manufacturing the same
#1036Semiconductor devices including schottky diodes with controlled breakdown
#1037Method of forming an integrated circuit having a device wafer with a diffused doped backside layer
#1038Semiconductor device and method of producing the semiconductor device
#1039CIRCUIT HAVING A SCHOTTKY CONTACT COMPONENT
#1040SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#1041Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power device
#1042Semiconductor device
#1043High-voltage PMOS transistor
#1044Bipolar-transistor and method for the production of a bipolar-transistor
#1045SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1046Semiconductor device and manufacturing method thereof
#1047Power semiconductor device
#1048Method of manufacturing semiconductor device
#1049Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making
#1050Charge balance techniques for power devices
#1051Near natural breakdown device
#1052Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone
#1053Trench gate type MOS transistor semiconductor device
#1054Semiconductor device and method of forming the same having a junction termination structure with a beveled sidewall
#1055High-withstand voltage wide-gap semiconductor device and power device
#1056Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same
#1057Semiconductor device
#1058Semiconductor device
#1059Gate turn-off thyristor
#1060Insulated gate type semiconductor device and method for fabricating the same
#1061VERTICAL TRANSISTOR WITH FIELD REGION STRUCTURE
#1062Semiconductor device
#1063Design and fabrication of rugged FRED, power MOSFET or IGBT
#1064Semiconductor device
#1065Semiconductor apparatus
#1066Termination structure for a power semiconductor device
#1067Semiconductor component with PN junction
#1068Method of forming a low resistance semiconductor contact and structure therefor
#1069Semiconductor device, method for manufacturing the same and method for evaluating the same
#1070Semiconductor device
#1071Power semiconductor device
#1072Schottky diode structure to reduce capacitance and switching losses and method of making same
#1073Semiconductor device and method of manufacturing the same
#1074Silicon carbide devices with hybrid well regions
#1075Power semiconductor device
#1076Trenched MOSFET device with contact trenches filled with tungsten plugs
#1077Edge structure with voltage breakdown in the linear region
#1078Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
#1079Semiconductor device having power transistors and Schottky barrier diode
#1080Semiconductor device and manufacturing method thereof
#1081MONOLITHIC CLASS D AMPLIFIER
#1082Semiconductor device and method of manufacturing the same
#1083Semiconductor device
#1084High-breakdown-voltage semiconductor device
#1085Semiconductor device and method for manufacturing same
#1086Semiconductor device and method for manufacturing same
#1087Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
#1088Semiconductor device having super junction structure
#1089Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#1090Semiconductor device with near-surface compensation doping area and method of fabricating
#1091Vertical transistor with field region structure
#1092Graded junction termination extensions for electronic devices
#1093Silicon-on-insulator device
#1094Semiconductor device and method of manufacturing the same
#1095Edge termination structures for silicon carbide devices
#1096Semiconductor component and method for producing the same
#1097Reduced guard ring in schottky barrier diode structure
#1098Semiconductor device
#1099Drain extended MOS transistor with improved breakdown robustness
#1100Pressed-contact type semiconductor device
#1101Pressed-contact type semiconductor device
#1102Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions
#1103Schottky diode structure to reduce capacitance and switching losses and method of making same
#1104Integrated circuit having a device wafer with a diffused doped backside layer
#1105Power semiconductor device
#1106Methods of fabricating silicon carbide devices with hybrid well regions
#1107Complementary transistors having different source and drain extension spacing controlled by different spacer sizes
#1108Thyristor component with improved blocking capabilities in the reverse direction
#1109High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
#1110Semiconductor device
#1111Solid-state circuit assembly
#1112Semiconductor device resistive to high voltage and capable of controlling leakage current
#1113Semiconductor element and manufacturing method thereof
#1114Non-activated guard ring for semiconductor devices
#1115Semiconductor device having a low concentration layer formed outside a drift layer
#1116Metal-oxide-semiconductor device including a buried lightly-doped drain region
#1117LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistance
#1118Radiation hardened MOS structure
#1119Semiconductor component having a pn junction and a passivation layer applied on a surface
#1120Semiconductor device and method of manufacturing the same
#1121Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same
#1122Complementary transistors having different source and drain extension spacing controlled by different spacer sizes
#1123Drain extend MOS transistor with improved breakdown robustness
#1124Semiconductor component and method for producing it
#1125Semiconductor device
#1126Insulated gate type semiconductor device and method for fabricating the same
#1127Metal-oxide-semiconductor device including a buried lightly-doped drain region
#1128Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions
#1129Integrated circuit with a PN junction diode
#1130Semiconductor device
#1131Vertical semiconductor device and manufacturing method thereof
#1132High-breakdown-voltage semiconductor device
#1133High-breakdown-voltage semiconductor device
#1134Semiconductor device
#1135Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capability
#1136Semiconductor device
#1137Fast recovery inverse diode
#1138Semiconductor structure and method of manufacturing the same
#1139Dual deep trenches for high voltage isolation
#1140Diode and method of making the same
#1141High voltage integrated circuits having improved on-resistance value and improved breakdown voltage
#1142Die stack assembly using an edge separation structure for connectivity through a die of the stack
#1143Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistor
#1144Conformal buffer layer in source and drain regions of fin-type transistors
#1145III-V fin on insulator
#1146Diodes with multiple junctions
#1147Stacked short and long channel FinFETs
#1148Semiconductor device