208269 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
Sub-classes:APPARATUS FOR ADJUSTING SPACING BETWEEN MOIRE SUPERLATTICES OF TWO-DIMENSIONAL MATERIALS
#2METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE
#3METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE
#4METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD PLATE FOR DRIFT REGION DIFFUSION
#5QUBIT ARRAY REPARATION
#6NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE
#7Method for making nanostructure transistors with source/drain trench contact liners
#8Method for making nanostructure transistors with offset source/drain dopant blocking structures including a superlattice
#9A HETEROSTRUCTURE FOR A HIGH ELECTRON MOBILITY TRANSISTOR AND A METHOD OF PRODUCING THE SAME
#10METHOD FOR MAKING RADIO FREQUENCY SILICON-ON-INSULATOR (RFSOI) STRUCTURE INCLUDING A SUPERLATTICE
#11HIGH ELECTRON MOBILITY TRANSISTOR
#12HIGH ELECTRON MOBILITY TRANSISTOR
#13CHANNEL UNIFORMITY HORIZONTAL GATE ALL AROUND DEVICE
#14INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGY
#15SEMICONDUCTOR DEVICES FOR HIGH FREQUENCY APPLICATIONS
#16Semiconductor structure
#17METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK FUNCTION TUNING
#18GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR
#19Quantum dot devices
#20Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure
#21Semiconductor structure and high-electron mobility transistor device having the same
#22Qubit array reparation
#23Non-equilibrium polaronic quantum phase-condensate based electrical devices
#24Heterostructure for a high electron mobility transistor and a method of producing the same
#25GAN BASED HEMT DEVICE RELAXED BUFFER STRUCTURE ON SILICON
#26Semiconductor structure comprising III-N material
#27Quantum tunneling matter-wave transistor system
#28Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance
#29III-N to rare earth transition in a semiconductor structure
#30Quantum dot devices
#31Quantum dot devices with modulation doped stacks
#32Optoelectronic device with light-emitting diodes
#33Quantum dot devices with diodes for electrostatic discharge protection
#34Zero capacitance electrostatic discharge device
#35Semiconductor structure and method of preparing semiconductor structure
#36Zero capacitance electrostatic discharge devices
#37Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element
#38Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element
#39Thin film transistor and manufacturing method thereof
#40High power device
#41SEMICONDUCTOR DEVICE INCLUDING NON-MONOCRYSTALLINE STRINGER ADJACENT A SUPERLATTICE-STI INTERFACE
#42Method for making a semiconductor device including non-monocrystalline stringer adjacent a superlattice-sti interface
#43Quantum dot devices with multiple dielectrics around fins
#44SEMICONDUCTOR LASER
#45III-nitride tunnel junction with modified P-N interface
#46Semiconductor device with recessed channel array transistor (RCAT) including a superlattice
#47Method for making DRAM with recessed channel array transistor (RCAT) including a superlattice
#48Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
#49Quantum dot channel (QDC) quantum dot gate transistors, memories and other devices
#50Semiconductor substrate having amorphous and single crystalline III-V compound semiconductor layers
#51Semiconductor material doping
#52III-Nitride transistor including a III-N depleting layer
#53Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
#54Split-electrode vertical cavity optical device
#55Dual wavelength hybrid device
#56Methods for forming photonic integrated circuits based on quantum cascade structures
#57PROCESS-SPECIFIC WAFER CARRIER CORRECTION TO IMPROVE THERMAL UNIFORMITY IN CHEMICAL VAPOR DEPOSITION SYSTEMS AND PROCESSES
#58Normally-off field effect transistor
#59Method of obtaining planar semipolar gallium nitride surfaces
#60Horizontal gate all around device isolation
#61III-nitride transistor including a p-type depleting layer
#62System and method for providing an electron blocking layer with doping control
#63Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
#64Semiconductor material doping
#65Superlattice buffer structure for gallium nitride transistors
#66Method to make buried, highly conductive p-type III-nitride layers
#67Method to fabricate quantum dot field-effect transistors without bias-stress effect
#68Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure
#69Extreme high mobility CMOS logic
#70Methods and apparatus for artificial exciton in CMOS processes
#71Incoherent type-III materials for charge carriers control devices
#72Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer
#73Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
#74Semiconductor heterostructure and method of fabrication thereof
#75Semiconductor light emitting device
#76Semiconductor epitaxial structure and method for forming the same
#77Semiconductor devices including superlattice depletion layer stack and related methods
#78Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure
#79Semiconductor light emitting device and method for manufacturing the same
#80System and method for providing an electron blocking layer with doping control
#81Semiconductor devices and methods of manufacturing the same
#82III-nitride transistor including a p-type depleting layer
#83Solution-processed sol-gel films including a crystallization aid, devices including same, and methods
#84Structure for III-V devices on silicon
#85Extreme high mobility CMOS logic
#86Superlattice crenelated gate field effect transistor
#87Semiconductor device and method for manufacturing the same
#88Group III nitride epitaxial substrate and method for manufacturing the same
#89Emitting device with compositional and doping inhomogeneities in semiconductor layers
#90ELECTRONIC DEVICE FROM DISSIPATIVE QUANTUM DOTS
#91Nitride semiconductor structure and method of preparing the same
#92Semiconductor apparatus
#93Emitting device with compositional and doping inhomogeneities in semiconductor layers
#94SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTORING THE SAME
#95INTERPENETRATING NETWORKS OF CARBON NANOSTRUCTURES AND NANO-SCALE ELECTROACTIVE MATERIALS
#96Apparatus pertaining to the co-generation conversion of light into electricity
#97Photonic integrated circuits based on quantum cascade structures
#98Joined nanostructures and methods therefor
#99Semiconductor devices and methods of manufacturing the same
#100Solid memory
#101Solid memory
#102SUPER LATTICE STRUCTURE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING SUPER LATTICE STRUCTURE, AND METHOD OF MAKING SUPER LATTICE STRUCTURE
#103Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures
#104Nanoscale emitters with polarization grading
#105Gallium-nitride-based light emitting diodes with multiple potential barriers
#106III nitride epitaxial substrate and deep ultraviolet light emitting device using the same
#107Boundary-modulated nanoparticle junctions and a method for manufacture thereof
#108Photodiode, optical sensor device, and photodiode manufacturing method
#109Extreme high mobility CMOS logic
#110Superlattice structure and method for making the same
#111Semiconductor device and method of manufacturing the same
#112Joined nanostructures and methods therefor
#113Multiple-wavelength opto-electronic device including a superlattice
#114Doped graphene electronic materials
#115Boundary-modulated nanoparticle junctions and a method for manufacture thereof
#116Superlattice structure and method for making the same
#117High efficiency thermoelectric materials and devices
#118High electron mobility transistor and method for fabricating the same
#119Semiconductor nanostructure
#120Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions
#121SOLID MEMORY
#122SOLID MEMORY
#123Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures
#124Thick nitride semiconductor structures with interlayer structures
#125Multiple-wavelength opto-electronic device including a superlattice
#126Methods of making spintronic devices with constrained spintronic dopant
#127Extreme high mobility CMOS logic
#128Nanocrystal silicon quantum dot memory device
#129Method for making a semiconductor device including a superlattice within a recessed etch
#130Connectivity in quantum dot devices
#131Varactor with hyper-abrupt junction region including a superlattice
#132Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
#133Reticulated shallow etch mesa isolation
#134Nanowires, nanowire networks and methods for their formation and use