208282 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group , e.g. alloys in different semiconductor regions, e.g. heterojunctions
Semiconductor device and method of manufacturing the same
#2702Method and structure to enhance gate induced strain effect in multigate device
#2703Semiconductor device and manufacturing method thereof
#2704Semiconductor device and manufacturing method thereof
#2705Contact resistance reduction employing germanium overlayer pre-contact metalization
#2706Epitaxy in semiconductor structure and manufacturing method of the same
#2707FinFET semiconductor device with germanium diffusion over silicon fins
#2708Pulsed laser anneal process for transistors with partial melt of a raised source-drain
#2709Semiconductor device and fabricating method thereof
#2710Semiconductor device including semiconductor chip having epitaxial layer
#2711TUNNELING FIELD EFFECT TRANSISTOR
#2712Tunneling field effect transistor
#2713Handle for semiconductor-on-diamond wafers and method of manufacture
#2714Transistor design
#2715Epitaxial channel with a counter-halo implant to improve analog gain
#2716Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
#2717Semiconductor device with recess, epitaxial source/drain region and diffuson
#2718Silicon-on-nothing FinFETs
#2719Methods for manufacturing a fin structure of semiconductor device
#2720CONTACT RESISTANCE REDUCTION IN FINFETS
#2721Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric
#2722Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming
#2723Semiconductor process
#2724Semiconductor liner of semiconductor device
#2725Source/drain structure of semiconductor device
#2726Transistor and method for forming the same
#2727Method to reduce etch variation using ion implantation
#2728Integrated electronic device with edge-termination structure and manufacturing method thereof
#2729Methods of manufacturing semiconductor devices and electronic devices
#2730CONTACT RESISTANCE REDUCTION IN FINFETS
#2731NPN heterojunction bipolar transistor in CMOS flow
#2732Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the same
#2733Strained asymmetric source/drain
#2734Active regions with compatible dielectric layers
#2735Epitaxial source/drain differential spacers
#2736Semiconductor device with epitaxial structures
#2737MOS devices having non-uniform stressor doping
#2738FinFET having superlattice stressor
#2739CMOS DEVICES WITH STRESSED CHANNEL REGIONS, AND METHODS FOR FABRICATING THE SAME
#2740Method for the formation of a finFET device with epitaxially grown source-drain regions having a reduced leakage path
#2741Method for forming a nanowire field effect transistor device having a replacement gate
#2742Method of making bipolar junction transistor by forming base epitaxy region on etched opening in DARC layer
#2743Method for fabricating a field effect transistor with local isolations on raised source/drain trench sidewalls
#2744Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width
#2745Methods of fabricating semiconductor devices
#2746Semiconductor devices and methods of fabricating the same
#2747FDSOI semiconductor structure and method for manufacturing the same
#2748Super junction semiconductor device having columnar super junction regions
#2749Transistor amplifier circuit and integrated circuit
#2750FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
#2751CMOS devices with reduced leakage and methods of forming the same
#2752Structure and method for FinFET device with buried sige oxide
#2753Fin structure of semiconductor device
#2754Non-planar gate all-around device and method of fabrication thereof
#2755Vertical semiconductor devices including superlattice punch through stop layer and related methods
#2756Method for fabricating a semiconductor device having buried bit lines
#2757Method to induce strain in 3-D microfabricated structures
#2758Fabrication methods facilitating integration of different device architectures
#2759SEMICONDUCTOR WAFER, MANUFACTURING METHOD OF SEMICONDUCTOR WAFER AND METHOD FOR MAUNFACTURING COMPOSITE WAFER
#2760Controlling the shape of source/drain regions in FinFETs
#2761Semiconductor device having V-shaped region
#2762Transistor device
#2763Electronic device having carbon layer and method for manufacturing the same
#2764Graphene device including separated junction contacts and method of manufacturing the same
#2765Methods for fabricating integrated circuits with robust gate electrode structure protection
#2766Semiconductor device with a strained region and method of making
#2767Methods of forming a nanowire transistor device
#2768Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices
#2769Systems and methods for a semiconductor structure having multiple semiconductor-device layers
#27703 dimensional semiconductor device having a lateral channel
#2771Silicon germanium processing
#2772Semiconductor structure with increased space and volume between shaped epitaxial structures
#2773Semiconductor devices and methods of manufacturing the same
#2774Lattice-mismatched semiconductor structures and related methods for device fabrication
#2775Source/drain junction formation
#2776Multi-height multi-composition semiconductor fins
#2777Aqueous cleaning techniques and compositions for use in semiconductor device manufacture
#2778Spacer scheme for semiconductor device
#2779Method for improving transistor performance through reducing the salicide interface resistance
#2780Fin spacer protected source and drain regions in FinFETs
#2781Semiconductor devices with graphene nanoribbons
#2782Transistor channel
#2783Replacement metal gates to enhance transistor strain
#2784Semiconductor device using Ge channel and manufacturing method thereof
#2785Passivated and faceted for fin field effect transistor
#2786Semiconductor device with low-conducting buried and/or surface layers
#2787Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications
#2788Method of making a CMOS semiconductor device using a stressed silicon-on-insulator (SOI) wafer
#2789Integrated circuit devices including FinFETS and methods of forming the same
#2790FinFET structure with cavities and semiconductor compound portions extending laterally over sidewall spacers
#2791Vertical transistor devices for embedded memory and logic technologies
#2792Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a reduced surface field effect trench structure
#2793MOSFET with source side only stress
#2794Mechanism for forming metal gate structure
#2795Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels
#2796Method for producing a field effect transistor including forming a gate after forming the source and drain
#2797Forming a non-planar transistor having a quantum well channel
#2798Semiconductor device having buried bit lines and method for fabricating the same
#2799Epitaxial formation mechanisms of source and drain regions
#2800Semiconductor structure and method for manufacturing the same
#2801INTEGRATED CIRCUITS WITH STRAINED SILICON AND METHODS FOR FABRICATING SUCH CIRCUITS
#2802Semiconductor devices with heterojunction barrier regions and methods of fabricating same
#2803Semiconductor device and method of forming the same
#2804Method of forming different voltage devices with high-K metal gate
#2805Semiconductor device having embedded strain-inducing pattern and method of forming the same
#2806Compound semiconductor structure
#2807Semiconductor structure and method of forming the same
#2808Transistors with high concentration of boron doped germanium
#2809Device structure with increased contact area and reduced gate capacitance
#2810FinFETs with strained well regions
#2811FINFET WITH SELF-ALIGNED PUNCHTHROUGH STOPPER
#2812Methods for making a semiconductor device with shaped source and drain recesses and related devices
#2813Tin doped III-V material contacts
#2814Defect-Free SiGe source/drain formation by epitaxy-free process
#2815Metal gate stack having TaAlCN layer
#2816Method of forming a complementary metal-oxide-semiconductor (CMOS) device
#2817Methods of forming films including germanium tin and structures and devices including the films
#2818Method of forming a FinFET having an oxide region in the source/drain region
#2819Source and drain doping profile control employing carbon-doped semiconductor material
#2820Anchored stress-generating active semiconductor regions for semiconductor-on-insulator finfet
#2821Method of manufacturing IC comprising a bipolar transistor and IC
#2822MOS transistors and fabrication method thereof
#2823Semiconductor device including fin component having parts with different widths
#2824Methods and apparatus for bipolar junction transistors and resistors
#2825Semiconductor graphene structures, semiconductor devices including such structures, and related methods
#2826Method of manufacturing a fin-like field effect transistor (FinFET) device
#2827Replacement source/drain finFET fabrication
#2828Semiconductor devices and methods of manufacturing the same
#2829Method of forming a semiconductor device
#2830Method for fabricating a finFET in a large scale integrated circuit
#2831Integration of the silicon IMPATT diode in an analog technology
#2832Semiconductor fin isolation by a well trapping fin portion
#2833Techniques providing metal gate devices with multiple barrier layers
#2834Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
#2835Method for fabricating semiconductor device
#2836FINFET device having a channel defined in a diamond-like shape semiconductor structure
#2837Junction field-effect transistor with raised source and drain regions formed by selective epitaxy
#2838High mobility strained channels for fin-based transistors
#2839SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#2840Structure and method for nFET with high k metal gate
#2841Semiconductor device and method for manufacturing same
#2842Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide
#2843Tucked active region without dummy poly for performance boost and variation reduction
#2844Replacement channel
#2845Embedded shape SiGe for strained channel transistors
#2846Semiconductor device and method for fabricating the same
#2847Semiconductor device and fabrication method thereof
#2848Reduced resistance SiGe FinFET devices and method of forming same
#2849SEMICONDUCTOR ALLOY FIN FIELD EFFECT TRANSISTOR
#2850Semiconductor devices
#2851Graphene transistor
#2852Fabrication of MOS device with schottky barrier controlling layer
#2853BIPOLAR TRANSISTORS WITH CONTROL OF ELECTRIC FIELD
#2854Semiconductor device and circuit with dynamic control of electric field
#2855Semiconductor device and a method of fabricating the same
#2856MOS transistors and fabrication methods thereof
#2857Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
#2858Semiconductor structure with different fins of FinFETs
#2859Bipolar transistor with embedded epitaxial external base region and method of forming the same
#2860Fin-last finFET and methods of forming same
#2861Silicon and silicon germanium nanowire structures
#2862Method for fabricating metal-oxide semiconductor transistor
#2863Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
#2864High performance strained source-drain structure and method of fabricating the same
#2865Selective epitaxial growth of semiconductor materials with reduced defects
#2866Semiconductor arrangement with substrate isolation
#2867Reacted conductive gate electrodes and methods of making the same
#2868Apparatus and method for forming semiconductor contacts
#2869Methods for manufacturing devices with source/drain structures
#2870Gap fill self planarization on post EPI
#2871Structure of metal gate structure and manufacturing method of the same
#2872Vertical PMOS field effect transistor and manufacturing method thereof
#2873Transistor with improved sigma-shaped embedded stressor and method of formation
#2874Integrated circuits having source/drain structure
#2875Graphene devices and methods of fabricating the same
#2876Semiconductor device and method for manufacturing the same
#2877SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD THEREOF, AND SEMICONDUCTOR APPARATUS USING THE SAME AND FABRICATION METHOD THEREOF
#2878Transistors, methods of forming transistors and display devices having transistors
#2879SiGe SRAM butted contact resistance improvement
#2880Semiconductor device and fabrication method thereof
#2881Graphene base transistor with reduced collector area
#2882Methods of fabricating semiconductor devices
#2883Method of manufacturing semiconductor devices
#2884Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same
#2885Strained silicon nFET and silicon germanium pFET on same wafer
#2886Semiconductor device
#2887Integrated circuits and methods for fabricating integrated circuits with active area protection
#2888Strained silicon nFET and silicon germanium pFET on same wafer
#2889Accumulation-mode field effect transistor with improved current capability
#2890High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices
#2891SiGe surface passivation by germanium cap
#2892Semiconductor structure
#2893Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices
#2894Semiconductor structure
#2895FinFETs with strained well regions
#2896Engineered source/drain region for n-Type MOSFET
#2897Method for enhancing channel strain
#2898Semiconductor device with charge compensation structure
#2899Isolation structure of semiconductor device
#2900Semiconductor device
#2901FinFETs with strained well regions
#2902Semiconductor device and method of forming epitaxial layer
#2903Non-planar gate all-around device and method of fabrication thereof
#2904Methods for forming semiconductor regions in trenches
#2905Semiconductor device and method for manufacturing the same
#2906Epitaxial process
#2907Devices with strained source/drain structures
#2908BIPOLAR DIODE HAVING AN OPTICAL QUANTUM STRUCTURE ABSORBER
#2909Contact structure of semiconductor device
#2910Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure
#2911Transistor device and fabrication method
#2912SEMICONDUCTOR DEVICE HAVING EPITAXIAL STRUCTURES
#2913Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
#2914Field effect transistor
#2915Blanket EPI super steep retrograde well formation without Si recess
#2916Reduced scale resonant tunneling field effect transistor
#2917Methods of forming fins for a FinFET device wherein the fins have a high germanium content
#2918Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications
#2919Semiconductor device and fabrication method therefor
#2920Source/drain extension control for advanced transistors
#2921Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levels
#2922Epitaxial grown extremely shallow extension region
#2923Methods for forming fins for metal oxide semiconductor device structures
#2924Semiconductor structure having contact plug and method of making the same
#2925Facet-free strained silicon transistor
#2926Inducement of strain in a semiconductor layer
#2927Strained structure of a semiconductor device
#2928Transistor with improved sigma-shaped embedded stressor and method of formation
#2929Device having source/drain regions regrown from un-relaxed silicon layer
#2930Recessed gate field effect transistor
#2931Semiconductor devices with recessed base electrode
#2932Reducing pattern loading effect in epitaxy
#2933Method for producing a field effect transistor with a SiGe channel by ion implantation
#2934Epitaxial layer
#2935Transistors with uniaxial stress channels
#2936Method of fabricating semiconductor device
#2937Semiconductor device and fabrication method thereof
#2938Epitaxial Wafer, Method for Fabricating the Wafer, and Semiconductor Device Including the Wafer
#2939Semiconductor device and fabrication method thereof
#2940Apparatus and method for forming semiconductor contacts
#2941Embedded source/drains with epitaxial oxide underlayer
#2942Forming silicon-carbon embedded source/drain junctions with high substitutional carbon level
#2943Semiconductor alloy fin field effect transistor
#2944COMPRESSIVELY STRAINED SOI SUBSTRATE
#2945SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
#2946CMOS devices with Schottky source and drain regions
#2947Integrated circuit transistor structure with high germanium concentration SiGe stressor
#2948Semiconductor device having doped epitaxial region and its methods of fabrication
#2949Threshold adjustment for quantum dot array devices with metal source and drain
#2950Transistors incorporating metal quantum dots into doped source and drain regions
#2951Semiconductor device and manufacturing method therefor
#2952EPITAXIAL GROWTH OF SMOOTH AND HIGHLY STRAINED GERMANIUM
#2953Partially-blocked well implant to improve diode ideality with SiGe anode
#2954Partially-blocked well implant to improve diode ideality with SiGe anode
#2955FinFET with self-aligned punchthrough stopper
#2956Semiconductor device having buried bit lines and method for fabricating the same
#2957Semiconductor device having buried bit lines and method for fabricating the same
#2958Method for manufacturing a transistor device comprising a germanium based channel layer
#2959Method and device to achieve self-stop and precise gate height
#2960Germanium-based quantum well devices
#2961Methods of forming a layer of silicon on a layer of silicon/germanium
#2962Aligned gate-all-around structure
#2963Reduction of Proximity Effects in Field-Effect Transistors with Embedded Silicon-Germanium Source and Drain Regions
#2964Semiconductor device and method for manufacturing the same
#2965Apparatus and Method for Multiple Gate Transistors
#2966Device with strained layer for quantum well confinement and method for manufacturing thereof
#2967Methods for forming semiconductor device structures
#2968Strained Structure of a Semiconductor Device
#2969Semiconductor device and method of forming the same
#2970Semiconductor device and fabrication method thereof
#2971Methods for manufacturing a field-effect semiconductor device
#2972Replacement gate electrode with planar work function material layers
#2973Semiconductor device and manufacturing method of the same
#2974Contact structure of semiconductor device
#2975Gate electrode of field effect transistor
#2976Method for manufacturing CMOS transistor
#2977Tunnel field effect transistor
#2978Integrated circuit having a replacement gate structure and method for fabricating the same
#2979Source and drain doping profile control employing carbon-doped semiconductor material
#2980Semiconductor structures and methods of manufacturing the same
#2981Semiconductor device and method for manufacturing same
#2982Semiconductor devices
#2983High mobility strained channels for fin-based transistors
#2984P-type graphene base transistor
#2985Method for fabricating semiconductor device
#2986Replacement gate fin first wire last gate all around devices
#2987Salicide process
#2988Method of substantially reducing the formation of SiGe abnormal growths on polycrystalline electrodes for strained channel PMOS transistors
#2989Methods for introducing carbon to a semiconductor structure
#2990Drain extended field effect transistors and methods of formation thereof
#2991Tunnel transistor with high current by bipolar amplification
#2992Transistor device and fabrication method
#2993FinFET with high mobility and strain channel
#2994Semiconductor device having germanium active layer with underlying diffusion barrier layer
#2995Integrated RF front end system
#2996Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
#2997Semiconductor Device and Method for Producing a Doped Semiconductor Layer
#2998Substrate resistor and method of making same
#2999Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same
#3000Semiconductor devices and methods for manufacturing the same