208412 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
GaN dual field plate device with single field plate metal
#602Field-effect semiconductor device and manufacturing method therefor
#603Germanium-based quantum well devices
#604Semiconductor device having improved heat dissipation
#605SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#606Techniques for forming non-planar germanium quantum well devices
#607Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask
#608Normally-off compound semiconductor tunnel transistor with a plurality of charge carrier gases
#609III-nitride semiconductor device with stepped gate
#610Enhancement Mode III-Nitride Device
#611Compound semiconductor device and method of manufacturing same
#612High electron mobility transistor and method of manufacturing the same
#613High electron mobility transistor and method of manufacturing the same
#614High electron mobility transistors and methods of manufacturing the same
#615Graphene electronic device and method of fabricating the same
#616Compound semiconductor device having overhang-shaped gate
#617Transistor device and fabrication method
#618Vertical tunneling negative differential resistance devices
#619Semiconductor device having germanium active layer with underlying diffusion barrier layer
#620METHOD FOR MANUFACTURING NITRIDE ELECTRONIC DEVICES
#621Strain-inducing semiconductor regions
#622Compound semiconductor device and method for manufacturing the same
#623Semiconductor structure and method for manufacturing the same
#624Compound semiconductor device and manufacturing method thereof
#625IN SITU GROWN GATE DIELECTRIC AND FIELD PLATE DIELECTRIC
#626Side-gate defined tunable nanoconstriction in double-gated graphene multilayers
#627Thin film hybrid junction field effect transistor
#628Enhancement mode III-N HEMTs
#629Selectively area regrown III-nitride high electron mobility transistor
#630Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
#631Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
#632Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors
#633HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME
#634NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#635Graphene transistors with self-aligned gates
#636High electron mobility transistor and method of manufacturing the same
#637Group 13 nitride semiconductor device and method of its manufacture
#638Contact structures for compound semiconductor devices
#639Graphene transistors with self-aligned gates
#640Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion
#641Enhancement mode III-nitride transistors
#642Wafer level packaged GaN power semiconductor device and the manufacturing method thereof
#643Transistor with improved sigma-shaped embedded stressor and method of formation
#644Method for manufacturing a compound semiconductor device
#645Group III-N nanowire transistors
#646Strain compensation in transistors
#647Group III-N HFET with a graded barrier layer
#648Semiconductor Structure of Hybrid of Coplanar Ge and III-V and Preparation Method Thereof
#649SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#650Semiconductor device and method for manufacturing same
#651Programmable III-nitride semiconductor device
#652COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#653COMPOUND SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME
#654Methods of fabricating nitride-based transistors with an ETCH stop layer
#655Manufacturing method of semiconductor device, semiconductor device, and semiconductor crystal growth substrate
#656METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND THE SAME MANUFACTURED THEREOF
#657COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#658Compound semiconductor device and method for manufacturing the same
#659SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#660SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
#661Increasing carrier injection velocity for integrated circuit devices
#662ENHANCEMENT MODE FIELD EFFECT DEVICE AND THE METHOD OF PRODUCTION THEREOF
#663Circuit including a negative differential resistance (NDR) device having a graphene channel, and method of operating the circuit
#664High electron mobility transistor and method of manufacturing the same
#665Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
#666Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device
#667Ohmic contact to semiconductor
#668Normally-off compound semiconductor tunnel transistor
#669Power transistor having segmented gate
#670Antimonide-based compound semiconductor with titanium tungsten stack
#671Method of manufacturing compound semiconductor device
#672Low-defect density gallium nitride semiconductor structures and devices thereof
#673NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#674High electron mobility transistors with field plate electrode
#675COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#676MANUFACTURING OF SCALABLE GATE LENGTH HIGH ELECTRON MOBILITY TRANSISTORS
#677HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
#678Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same
#679Semiconductor structure
#680Graphene electronic device and manufacturing method thereof
#681Vertical GaN-based semiconductor device
#682Epitaxial substrate for semiconductor device, semiconductor device, method of manufacturing epitaxial substrate for semiconductor device, and method of manufacturing semiconductor device
#683Transistor with enhanced channel charge inducing material layer and threshold voltage control
#684Compound semiconductor device with buried field plate
#685Gated III-V semiconductor structure and method
#686SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME
#687IN SITU GROWN GATE DIELECTRIC AND FIELD PLATE DIELECTRIC
#688Method of manufacturing nitride semiconductor device
#689GaN high voltage HFET with passivation plus gate dielectric multilayer structure
#690Split-channel transistor and methods for forming the same
#691High electron mobility transistor structure with improved breakdown voltage performance
#692Reducing contact resistance for field-effect transistor devices
#693Method for cleaning film formation apparatus and method for manufacturing semiconductor device
#694Compound semiconductor device and manufacturing method of the same
#695DEVICE STRUCTURE INCLUDING HIGH-THERMAL-CONDUCTIVITY SUBSTRATE
#696Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
#697Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
#698Method of forming a semiconductor device
#699Compound semiconductor device and method for fabricating
#700FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE
#701Deposited material and method of formation
#702High electron mobility transistor and method of manufacturing the same
#703Group III-V device structure having a selectively reduced impurity concentration
#704Semiconductor device and method for manufacturing the same
#705HEMT with integrated low forward bias diode
#706Non-planar germanium quantum well devices
#707Semiconductor Device and Manufacturing Method thereof
#708Power device and method for manufacturing the same
#709Apparatus and methods for improving parallel conduction in a quantum well device
#710Compound semiconductor device and method for manufacturing the same
#711GRAPHENE CHANNEL TRANSISTORS AND METHOD FOR PRODUCING SAME
#712Quantum-well-based semiconductor devices
#713Self-aligned contacts in carbon devices
#714Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same
#715Vertical tunneling negative differential resistance devices
#716Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel
#717Graphene electronic device and method of fabricating the same
#718High performance field-effect transistors
#719Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device
#720Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains
#721Programmable gate III-nitride semiconductor device
#722Semiconductor device and method for manufacturing semiconductor device
#723Forming a non-planar transistor having a quantum well channel
#724Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle
#725Compound semiconductor device, method for manufacturing the device and electric device
#726Semiconductor chip with graphene based devices in an interconnect structure of the chip
#727III-N device structures and methods
#728Germanium-based quantum well devices
#729Graphene formation on dielectrics and electronic devices formed therefrom
#730UNIAXIALLY STRAINED QUANTUM WELL DEVICE AND METHOD OF MAKING SAME
#731SUBSTRATE, MANUFACTURING METHOD OF SUBSTRATE, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
#732Stress modulated group III-V semiconductor device and related method
#733Nitride based semiconductor device and method for manufacturing the same
#734Programmable gate III-nitride power transistor
#735Microwave semiconductor device using compound semiconductor and method for manufacturing the same
#736Non-planar quantum well device having interfacial layer and method of forming same
#737Strain inducing semiconductor regions
#738Integrated electronic device with edge-termination structure and manufacturing method thereof
#739FIELD-EFFECT TRANSISTOR
#740Semiconductor device
#741Compound semiconductor device and method of manufacturing the same
#742Apparatus and methods for improving parallel conduction in a quantum well device
#743Semiconductor device
#744Method for manufacturing semiconductor device with semiconductor materials with different lattice constants
#745Self-aligned contacts in carbon devices
#746High electron mobility transistors and methods of fabricating the same
#747Enhancement mode III-nitride FET
#748High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same
#749Method of manufacturing compound semiconductor device with gate electrode forming before source electrode and drain electrode
#750Gallium nitride device with a diamond layer
#751Enhancement-mode GaN MOSFET with low leakage current and improved reliability
#752Forming a non-planar transistor having a quantum well channel
#753Germanium-based quantum well devices
#754Conductivity improvements for III-V semiconductor devices
#755Materials for interfacing high-K dielectric layers with III-V semiconductors
#756Non-planar germanium quantum well devices
#757Dual layer gate dielectrics for non-silicon semiconductor devices
#758Increasing carrier injection velocity for integrated circuit devices
#759Techniques and configurations to impart strain to integrated circuit devices
#760Apparatus and methods for forming a modulation doped non-planar transistor
#761HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME
#762Quantum-well-based semiconductor devices
#763Compound semiconductor device with T-shaped gate electrode
#764Enhancement mode III-nitride transistors with single gate Dielectric structure
#765Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
#766OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
#767Strain-inducing semiconductor regions
#768Transistor with enhanced channel charge inducing material layer and threshold voltage control
#769High hole mobility p-channel Ge transistor structure on Si substrate
#770Transistor component having an amorphous semi-isolating channel control layer
#771Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device
#772III-V HEMT devices
#773Tunneling field effect transistor switch device
#774Field-Effect Heterostructure Transistors
#775High-mobility multiple-gate transistor with improved on-to-off current ratio
#776Apparatus and methods for improving parallel conduction in a quantum well device
#777Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
#778Semiconductor heterojunction devices based on SiC
#779Gallium nitride layer with diamond layers
#780Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices
#781Low-defect density gallium nitride semiconductor structures and fabrication methods
#782Junction Field-Effect Transistor Having Insulator-Isolated Source/Drain Regions and Fabrication Method Therefor
#783METHOD FOR FABRICATING A JUNCTION FIELD EFFECT TRANSISTOR AND THE JUNCTION FIELD EFFECT TRANSISTOR ITSELF
#784Apparatus and methods for forming a modulation doped non-planar transistor
#785Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
#786Fabricating a gallium nitride layer with diamond layers
#787Fabricating a gallium nitride device with a diamond layer
#788Nitride-based transistors with a cap layer and a recessed gate
#789Enhancement mode semiconductor device
#790Enhancement mode III-N HEMTs
#791Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
#792Microwave semiconductor device using compound semiconductor and method for manufacturing the same
#793HETEROJUNCTION FIELD EFFECT TRANSISTOR
#794SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#795III-nitride semiconductor device with stepped gate trench and process for its manufacture
#796Compound semiconductor device with T-shaped gate electrode and its manufacture
#797High speed GE channel heterostructures for field effect devices
#798High hole mobility p-channel Ge transistor structure on Si substrate
#799Epitaxial source/drain transistor
#800Semiconductor device and a method for manufacturing a semiconductor device
#801Semiconductor device and a method for manufacturing a semiconductor device
#802Antimonide-based compound semiconductor with titanium tungsten stack
#803Enhancement mode III-nitride FET
#804Forming a non-planar transistor having a quantum well channel
#805Forming a type I heterostructure in a group IV semiconductor
#806HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME
#807Compound semiconductor device and method of manufacturing the same
#808Trench type MOSFET and method of fabricating the same
#809Strain-inducing semiconductor regions
#810Integrated circuit device and method of producing the same
#811Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
#812III-nitride power semiconductor device having a programmable gate
#813Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
#814III-V hemt devices
#815Enhancement mode field effect device and the method of production thereof
#816Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
#817Polytype hetero-interface high electron mobility device and method of making
#818Trench type MOSgated device with strained layer on trench sidewall
#819High speed GE channel heterostructures for field effect devices
#820Methods of fabricating transistors including dielectrically-supported gate electrodes
#821Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same
#822Normally off III-nitride semiconductor device having a programmable gate
#823Nitride-based transistors and fabrication methods with an etch stop layer
#824Structure for and method of fabricating a high-mobility field-effect transistor
#825Integrated circuit device and method of producing the same
#826Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD
#827Methods of fabricating contact regions for FET incorporating SiGe
#828Fabrication of MOS-gated strained-Si and SiGe buried channel field effect transistors
#829Semiconductor device and manufacturing method thereof
#830Enhancement mode III-nitride FET
#831Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
#832Methods of fabricating strained-channel FET having a dopant supply region
#833Method for producing one or more monocrystalline layers, each with a different lattice structure, on one plane of a series of layers
#834Trench type mosgated device with strained layer on trench sidewall
#835Structure for and method of fabricating a high-mobility field-effect transistor
#836Multi-channel transistor
#837Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
#838Fabrication of a dual-operation depletion/enhancement mode high electron mobility transistor
#839Semiconductor power device
#840Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
#841High electron mobility transistor
#842Non-polar, III-nitride semiconductor fin field-effect transistor
#843Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
#844Metal semiconductor field effect transistor with carbon nanotube gate
#845Multi-layer active layer having a partial recess
#846T-gate field effect transistor with non-linear channel layer and/or gate foot face
#847Semiconductor structure, HEMT structure and method of forming the same
#848Semiconductor device with multiple carrier channels
#849Field effect power electronic device and method for fabricating the same
#850Method to produce high electron mobility transistors with Boron implanted isolation
#851Non-uniform two-dimensional electron gas profile in III-nitride HEMT devices
#852Thermal management for heterogeneously integrated technology
#853Method and structure for encapsulation and interconnection of transistors
#854Overvoltage tolerant HFETs
#855Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing
#856Transistor having doped substrate and method of making the same
#857AC-driven high electron mobility transistor devices