208412 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel
#302Manufacturing method of semiconductor device and semiconductor device
#303Semiconductor device
#304Cladding layer epitaxy via template engineering for heterogeneous integration on silicon
#305Semiconductor device and a method for manufacturing a semiconductor device
#306Strain compensation in transistors
#307Semiconductor device with silicon nitride film on nitride semiconductor layer and manufacturing method thereof
#308Dual-channel field effect transistor device having increased amplifier linearity
#309Zig-zag trench structure to prevent aspect ratio trapping defect escape
#310Methods and systems for ultra-high quality gated hybrid devices and sensors
#311Semiconductor device and method for manufacturing semiconductor device
#312Semiconductor device and manufacturing method of semiconductor device
#313Techniques for forming non-planar germanium quantum well devices
#314Vertical nanowire transistor with axially engineered semiconductor and gate metallization
#315Transistors incorporating metal quantum dots into doped source and drain regions
#316Semiconductor device including a superlattice and replacement metal gate structure and related methods
#317Semiconductor device and fabrication method thereof
#318Compound semiconductor device and manufacturing method of the same
#319Compound gated semiconductor device having semiconductor field plate
#320Structure for a gallium nitride (GaN) high electron mobility transistor
#321Multichannel devices with improved performance
#322Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon
#323Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the same
#324Apparatus and methods for forming a modulation doped non-planar transistor
#325Method of forming a high electron mobility semiconductor device and structure therefor
#326Threshold adjustment for quantum dot array devices with metal source and drain
#327Method of manufacturing a semiconductor device including a barrier structure
#328Ohmic contact to semiconductor
#329Robust and Reliable Power Semiconductor Package
#330Method for growing III-V epitaxial layers
#331Semiconductor device and manufacturing method thereof
#332High electron mobility transistor with indium nitride layer
#333Leakage current suppression methods and related structures
#334Enhancement mode III-N HEMTs
#335III-nitride transistor with enhanced doping in base layer
#336Germanium-based quantum well devices
#337Group III-N nanowire transistors
#338Nanowire nanoelectromechanical field-effect transistors
#339Semiconductor device and method for manufacturing semiconductor device
#340Method of forming an integrated multichannel device and single channel device structure
#341All around contact device and method of making the same
#342Semiconductor structure and manufacturing method thereof
#343III-V nitride resonate structure based photoacoustic sensor
#344Compound semiconductor device
#345Non-planar quantum well device having interfacial layer and method of forming same
#346Manufacturing method of graphene modulated high-K oxide and metal gate MOS device
#347FinFETs with strained well regions
#348Ambipolar synaptic devices
#349Group III-V device with a selectively modified impurity concentration
#350Semiconductor device and fabrication method thereof
#351HEMT DEVICE AND FABRICATION METHOD
#352SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#353Transistor with oxidized cap layer
#354Semiconductor device and method
#355Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench
#356Method of manufacturing semiconductor element
#357High electron mobility semiconductor device and method therefor
#358Enhancement mode III-nitride transistor
#359Compound semiconductor device and method for fabricating the same
#360Method of manufacturing compound semiconductor device
#361Semiconductor device having improved heat dissipation
#362Semiconductor device and method of fabricating semiconductor device
#363Semiconductor device and method of manufacturing the semiconductor device
#364Semiconductor device
#365Method of manufacturing a semiconductor device
#366Tunnel MOSFET with ferroelectric gate stack
#367Spintronic device
#368III-nitride device and method having a gate isolating structure
#369Semiconductor device and manufacturing method for the same
#370Semiconductor devices with core-shell structures
#371SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#372Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
#373INDIUM-CONTAINING CONTACT AND BARRIER LAYER FOR III-NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR DEVICES
#374Field-effect semiconductor device
#375Semiconductor device including multiple nanowire transistor
#376Ambipolar synaptic devices
#377Gate structure
#378High electron mobility transistor with indium nitride layer
#379Ambipolar synaptic devices
#380Semiconductor substructure having elevated strain material-sidewall interface and method of making the same
#381Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
#382Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel
#383Method for producing a semiconductor device comprising a Schottky diode and a high electron mobility transistor
#384Graphene heterostructure field effect transistors
#385Method of manufacturing a semiconductor device having a buried field plate
#386Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures
#387Semiconductor device including a gate electrode on a protruding group III-V material layer
#388Semiconductor device with recess, epitaxial source/drain region and diffuson
#389Semiconductor device and method
#390Integrated electronic device with edge-termination structure and manufacturing method thereof
#391Nitride semiconductor device
#392Epitaxially Growing III-V Contact Plugs for MOSFETs
#393SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR HAVING A LOW DOPED DRIFT REGION AND METHOD FOR THE FORMATION THEREOF
#394Electronic device
#395Semiconductor device and method of manufacturing the same
#396Semiconductor device and a method for manufacturing a semiconductor device
#397HIGH FREQUENCY DEVICE AND METHOD OF MANUFACTURING THE SAME
#398Transistors with field plates resistant to field plate material migration and methods of their fabrication
#399Semiconductor devices including superlattice depletion layer stack and related methods
#400Semiconductor device and method of manufacturing a semiconductor device
#401Electronic device having carbon layer and method for manufacturing the same
#402Methods of forming a nanowire transistor device
#403Transistor, method for fabricating the same, and electronic device including the same
#404SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#405Semiconductor device and method for manufacturing semiconductor device
#406Conductivity improvements for III-V semiconductor devices
#407HEMT-compatible lateral rectifier structure
#408Integrated circuit devices including strained channel regions and methods of forming the same
#409Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole
#410Group III-V Device Including a Buffer Termination Body
#411Spacer supported lateral channel FET
#412SEMICONDUCTOR DEVICE
#413Semiconductor Device and Method of Manufacturing the Same
#414CARBON NANOTUBE PRINTED ELECTRONICS DEVICES
#415Enhanced device and manufacturing method therefor
#416Vertical tunneling negative differential resistance devices
#417SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#418Semiconductor device having high mobility channel
#419FinFET structure with cavities and semiconductor compound portions extending laterally over sidewall spacers
#420Semiconductor device and manufacturing method thereof
#421High electron mobility transistor and manufacturing method thereof
#422Forming a non-planar transistor having a quantum well channel
#423METHOD FOR PRODUCING TRENCH HIGH ELECTRON MOBILITY DEVICES
#424SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#425High-mobility multiple-gate transistor with improved on-to-off current ratio
#426Vertical nanowire transistor with axially engineered semiconductor and gate metallization
#427Heterostructure with carrier concentration enhanced by single crystal REO induced strains
#428Transistor with diamond gate
#429HEMT with a metal film between the gate electrode and the drain electrode
#430Crystalline layer for passivation of III-N surface
#431Semiconductor device
#432Method of making high electron mobility transistor structure
#433Methods relating to a group III HFET with a graded barrier layer
#434Graphene electronic device and method of fabricating the same
#435FinFETs with strained well regions
#436High electron mobility transistor and method of manufacturing the same
#437Semiconductor device
#438Transistor having an ohmic contact by gradient layer and method of making the same
#439High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same
#440Semiconductor device including a trench with a corner having plural tapered portions
#441Compound semiconductor device and method of manufacturing the same
#442III-N device structures and methods
#443Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing
#444COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS AND METHODS OF THEIR FABRICATION
#445Integrated circuit with matching threshold voltages and method for making same
#446Semiconductor device and fabrication method thereof
#447Semiconductor device and fabrication method thereof
#448Semiconductor device and method of manufacturing semiconductor device
#449Semiconductor device containing HEMT and MISFET and method of forming the same
#450Compound semiconductor device and method of manufacturing the same
#451III-V device with overlapped extension regions using replacement gate
#452III-V FET device with overlapped extension regions using gate last
#453Transistor having metal diffusion barrier
#454High electron mobility transistor and method of forming the same
#455TRANSISTOR HAVING PARTIALLY OR WHOLLY REPLACED SUBSTRATE AND METHOD OF MAKING THE SAME
#456TRANSISTOR HAVING BACK-BARRIER LAYER AND METHOD OF MAKING THE SAME
#457Transistor having high breakdown voltage and method of making the same
#458Transistor having a back-barrier layer and method of making the same
#459Vertical Hetero Wide Bandgap Transistor
#460Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
#461VERTICAL TRANSISTORS HAVING P-TYPE GALLIUM NITRIDE CURRENT BARRIER LAYERS AND METHODS OF FABRICATING THE SAME
#462Gallium nitride power semiconductor device having a vertical structure
#463High electron mobility transistors and methods of fabricating the same
#464Selectively area regrown III-nitride high electron mobility transistor
#465Selective laser anneal on semiconductor material
#466Fin tunnel field effect transistor (FET)
#467Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same
#468Gate stack for normally-off compound semiconductor transistor
#469Trench high electron mobility transistor device
#470SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#471Semiconductor Device and Method for Manufacturing Semiconductor Device
#472Enhancement mode III-N HEMTs
#473Graphene transistor
#474Graphene capped HEMT device
#475Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device
#476III-n device with dual gates and field plate
#477Field-effect semiconductor device
#478Elemental semiconductor material contact for high electron mobility transistor
#479Elemental semiconductor material contact for high electron mobility transistor
#480Contact metallurgy for self-aligned high electron mobility transistor
#481SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#482Enhanced GaN transistor and the forming method thereof
#483Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
#484Group III-V device with a selectively modified impurity concentration
#485Group III-V device with a selectively reduced impurity concentration
#486Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
#487Nitride high electron mobility transistor having a channel forming stack
#488FET dielectric reliability enhancement
#489Methods of forming field effect transistors, including forming source and drain regions in recesses of semiconductor fins
#490Heterojunction semiconductor device and manufacturing method
#491Compound semiconductor device and method of manufacturing the same
#492Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
#493Method for producing a semiconductor device comprising a Schottky diode and a high electron mobility transistor
#494Transistor with improved sigma-shaped embedded stressor and method of formation
#495SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD THEREOF, AND SEMICONDUCTOR APPARATUS USING THE SAME AND FABRICATION METHOD THEREOF
#496Transistors, methods of forming transistors and display devices having transistors
#497Nitride-based semiconductor device
#498Ohmic contact structure for semiconductor device and method
#499Method of forming a high electron mobility semiconductor device and structure therefor
#500Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
#501Semiconductor device and manufacturing method thereof
#502Method of forming a gate contact
#503Source/drain structure of semiconductor device
#504Semiconductor device with self-aligned ohmic contacts
#505Carbon doping semiconductor devices
#506High electron mobility semiconductor device and method therefor
#507HEMT semiconductor device and a process of forming the same
#508FIELD EFFECT TRANSISTOR DEVICE
#509FinFETs with strained well regions
#510High mobility, thin film transistors using semiconductor/insulator transition-metal dichalcogenide based interfaces
#511Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the device
#512HETEROJUNCTION TRANSISTOR AND METHOD OF FABRICATING THE SAME
#513Nitride semiconductor device and method of manufacturing the same
#514Charge protection for III-nitride devices
#515Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same
#516Channel SiGe removal from PFET source/drain region for improved silicide formation in HKMG technologies without embedded SiGe
#517Semiconductor device containing HEMT and MISFET and method of forming the same
#518Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
#519MISHFET and Schottky device integration
#520High electron mobility transistor and method of forming the same
#521Graphene heterostructure field effect transistors
#522NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#523Semiconductor device and method of manufacturing semiconductor device
#524Vertical gallium nitride transistors and methods of fabricating the same
#525Compound semiconductor device and method for manufacturing the same
#526Semiconductor device and method for manufacturing the same
#527Metamorphic growth of III-V semiconductor on silicon substrate by MOCVD for high speed III-V transistors
#528High Electron Mobility Transistor Structure
#529Method of implanting dopants into a group III-nitride structure and device formed
#530Thick AlN inter-layer for III-nitride layer on silicon substrate
#531Method for manufacturing compound semiconductor device
#532Method for manufacturing semiconductor device
#533High electron mobility transistors
#534Three-dimensional quantum well transistor and fabrication method
#535Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereof
#536Semiconductor Structure Including A Spatially Confined Dielectric Region
#537Semiconductor HEMT device with stoichiometric silicon nitride layer
#538Semiconductor substructure having elevated strain material-sidewall interface and method of making the same
#539Semiconductor device and method for manufacturing semiconductor device
#540Compressive strained III-V complementary metal oxide semiconductor (CMOS) device
#541Method and system for a gallium nitride vertical transistor
#542High electron mobility transistor and method of forming the same
#543High electron mobility transistor and method of forming the same
#544III-V HEMT devices
#545Field effect transistor
#546Two-dimensional electron gas sensor and methods for making and using the sensor
#547Semiconductor device, method for manufacturing the same, power supply, and high-frequency amplifier
#548Method for growing III-V epitaxial layers
#549Transistor and method of fabricating the same
#550COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR
#551Method for growing III-V epitaxial layers and semiconductor structure
#552III-nitride transistor with source-connected heat spreading plate
#553Semiconductor device and method of manufacturing the semiconductor device
#554Transistor and method of fabricating the same
#555High electron mobility transistor and manufacturing method thereof
#556Semiconductor heterostructure field effect transistor and method for making thereof
#557High electron mobility transistor and method of manufacturing the same
#558COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#559ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF MAKING SAME
#560Transistors and fabrication method thereof
#561Process for fabricating an enhancement mode heterojunction transistor
#562Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound
#563Transistor with improved sigma-shaped embedded stressor and method of formation
#564Transistor with enhanced channel charge inducing material layer and threshold voltage control
#565Semiconductor structure and method for forming the same
#566Nitride-based semiconductor device and method for manufacturing the same
#567Method of manufacturing semiconductor device
#568NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#569HEMT with compensation structure
#570Method of fabricating GaN high voltage HFET with passivation plus gate dielectric multilayer structure
#571SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
#572Method for manufacturing semiconductor device and method for growing graphene
#573High electron mobility transistor and method of driving the same
#574Techniques for forming non-planar germanium quantum well devices
#575Strain inducing semiconductor regions
#576TECHNIQUES AND CONFIGURATIONS TO IMPART STRAIN TO INTEGRATED CIRCUIT DEVICES
#577Apparatus and methods for forming a modulation doped non-planar transistor
#578III-N device structures and methods
#579High-electron mobility transistor and method of manufacturing the same
#580Epitaxial buffer layers for group III-N transistors on silicon substrates
#581Enhancement-mode GaN MOSFET with low leakage current and improved reliability
#582COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#583COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#584Semiconductor devices including a first and second HFET and methods of manufacturing the same
#585Compound semiconductor device and method of manufacturing the same
#586COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#587Semiconductor device and method of making including cap layer and nitride semiconductor layer
#588Method of manufacturing a semiconductor device and semiconductor device
#589METHOD OF MANUFACTURING SEMICONDUCTOR CRYSTAL SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, SEMICONDUCTOR CRYSTAL SUBSTRATE, AND SEMICONDUCTOR APPARATUS
#590Semiconductor device and manufacturing method of semiconductor device
#591Semiconductor device and manufacturing method of semiconductor device
#592Power device and method for manufacturing the same
#593Compound semiconductor device and method for manufacturing the same
#594Threshold adjustment for quantum dot array devices with metal source and drain
#595Transistors incorporating metal quantum dots into doped source and drain regions
#596High electron mobility transistor and method of manufacturing the same
#597Heterostructure Transistor with Multiple Gate Dielectric Layers
#598HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME
#599Split-channel transistor and methods for forming the same
#600High electron mobility transistor and method of manufacturing the same