208412 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
#2SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF, AND SEMICONDUCTOR WAFER
#3MEMORY DEVICES INCLUDING MULTI-MATERIAL CHANNEL STRUCTURES
#4SEMICONDUCTOR DEVICE
#5SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
#6RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIERS AND ROUND GATE FOOT CORNERS
#7QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES
#8Semiconductor Device with Biofet and Biometric Sensors
#9HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING PROCESS THEREOF
#10ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STRUCTURE
#11ELECTRONIC DEVICE INCLUDING A POLYMER SUPPORT LAYER
#12SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AND AN OVERHANGING PORTION AND METHOD OF FABRICATION THEREFOR
#13Manufacturing method of semiconductor device
#14SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#15HETEROSTRUCTURE TRANSISTOR GATE WITH DIFFUSION BARRIER
#16SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
#17METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#18WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE
#19HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
#20ULTRALOW NOISE TRANSISTOR AMPLIFIERS VIA IMPROVED QUANTUM CONFINEMENT
#21VERTICAL ALUMINUM GALLIUM NITRIDE DEVICES ON CRYSTALLINE METALLIC SUBSTRATES
#22High electron mobility transistor including conductive plate filling trenches in passivation layer, and method for forming the same
#23HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSILICON LAYER
#24High electron mobility transistor devices having a silicided polysilicon layer
#25LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL CHANNEL LAYER, METHODS OF MANUFACTURING THE SAME, ELECTRONIC DEVICES INCLUDING 2D CHANNEL LAYER, AND ELECTRONIC APPARATUSES INCLUDING ELECTRONIC DEVICE
#26Semiconductor device, method of manufacturing the same and electronic device including the device
#27Gallium nitride transistor with a doped region
#28TWO-DIMENSIONAL SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF
#29EPITAXIAL STRUCTURE HAVING INTEGRATED MICROCHANNELS
#30SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME AND SEAL RING STRUCTURE
#31Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors
#32Field effect transistor with controllable resistance
#33ENHANCEMENT-MODE HEMT AND MANUFACTURING PROCESS OF THE SAME
#34High electron mobility transistor and method for forming the same
#35SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#36Semiconductor on insulator on wide band-gap semiconductor
#37SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF
#38CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLADDING LAYER ON THE NMOS CHANNEL
#39Flexible transistors with near-junction heat dissipation
#40High electron mobility transistor devices having a silicided polysilicon layer
#41Semiconductor structure, HEMT structure and method of forming the same
#42Semiconductor Device and Method of Manufacturing the Same
#43Plurality of stacked transistors attached by solder balls
#44Gate structures with air gap isolation features
#45Compound semiconductor device and method of manufacturing compound semiconductor device
#46Semiconductor device and manufacturing method thereof
#47METHOD OF CONTROLLING CHARGE DOPING IN VAN DER WAALS HETEROSTRUCTURES
#48NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#49High electron mobility transistor and method of forming the same
#50Methods of manufacturing semiconductor devices
#51Nitride-based semiconductor device and method for manufacturing the same
#52Method for making semiconductor device including superlattice with O18 enriched monolayers
#53SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
#54Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same
#55Apparatuses including multiple channel materials within a tier stack
#56Fin field-effect transistor device with low-dimensional material and method
#57Gallium Nitride high-electron mobility transistors with p-type layers and process for making the same
#58Semiconductor device that includes a conductive member and an electrode and method for manufacturing the same
#59High electron mobility transistor and method for forming the same
#60Semiconductor device and method for manufacturing the same
#61Field effect transistor with multiple stepped field plate
#62Process of forming an electronic device including a polymer support layer
#63High-electron-mobility transistor device and method of manufacturing the same
#64NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#65Hemt with plate over channel layer
#66High electron mobility transistor having conductive plate on passivation layer and method for forming the same
#67Asymmetrically angled gate structure and method for making same
#68Quantum dot devices with overlapping gates
#69Semiconductor on insulator on wide band-gap semiconductor
#70High hole mobility transistor (HHMT) and method of manufacturing the same
#71Implantation enabled precisely controlled source and drain etch depth
#72Symmetric arrangement of field plates in semiconductor devices
#73Threshold adjustment for quantum dot array devices with metal source and drain
#74Field effect transistor with at least partially recessed field plate
#75Semiconductor device with multichannel heterostructure and manufacturing method thereof
#76Semiconductor package having a chip carrier with a pad offset feature
#77Semiconductor Structure and Preparing Method for Semiconductor Structure
#78Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer
#79Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor
#80Symmetric arrangement of field plates in semiconductor devices
#81Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion
#82III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer
#83Field effect transistor with controllable resistance
#84Method for making semiconductor device including a superlattice and providing reduced gate leakage
#85Fin field-effect transistor device with low-dimensional material and method
#86Quantum dot devices with trenched substrates
#87Thin-film active surface for fuzzy template matching
#88Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
#89Flexible transistors with near-junction heat dissipation
#90Semiconductor device and method for forming the same
#91Semiconductor device and method for forming the same
#92Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device
#93HEMT-compatible lateral rectifier structure
#94Surface treatment and passivation for high electron mobility transistors
#95High electron mobility transistor and method of forming the same
#96Semiconductor structure, HEMT structure and method of forming the same
#97Enhancement mode MISHEMT with GaN channel regrowth under a gate area
#98Apparatus including multiple channel materials, and related methods, memory devices, and electronic systems
#99Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement
#100III-V transistors with resistive gate contacts
#101Gallium nitride transistor with a doped region
#102Field-effect transistor structure and fabrication method
#103Field-effect transistors with channel regions that include a two-dimensional material on a mandrel
#104High electron mobility transistor (HEMT)
#105Semiconductor device including subsystem interfaces and communications method thereof
#106Ferroelectric transistors and assemblies comprising ferroelectric transistors
#107High-electron-mobility transistor with high voltage endurance capability and preparation method thereof
#108Opto-electronic HEMT
#109Dielectric passivation for layered structures
#110Process of forming an electronic device including a polymer support layer
#111SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#112Integration of vertical GaN varactor with HEMT
#113High electron mobility transistor (HEMT)
#114Composite-channel high electron mobility transistor
#115Methods for dicing semiconductor wafers and semiconductor devices made by the methods
#116Group-III nitride semiconductor device and method for fabricating the same
#117Semiconductor device including high electron mobility transistor or high hole mobility transistor and method of fabricating the same
#118Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
#119Semiconductor device, method of manufacturing the same and electronic device including the device
#120Nitride semiconductor substrate
#121Semiconductor device
#122Nitride semiconductor device and method of manufacturing the same
#123Semiconductor devices with a protection layer and methods of fabrication
#124Enhancement mode gallium nitride based transistor device and manufacturing method thereof
#125Gallium nitride transistor with a doped region
#126Field effect transistor with controllable resistance
#127Surface treatment and passivation for high electron mobility transistors
#128Self aligned gate connected plates for group III-Nitride devices and methods of fabrication
#129GATE-ALL-AROUND QUANTUM WELL COMPLEMENTARY INVERTER AND METHOD OF MAKING THE SAME
#130High voltage cascode HEMT device
#131Electronic component with a high-electron-mobility heterojunction
#132Semiconductor device, method of manufacturing the same, and electronic device including the device
#133High electron mobility transistor and methods for manufacturing the same
#134HEMT-compatible lateral rectifier structure
#135Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor
#136Semiconductor device and method for manufacturing the same
#137High-power and high-frequency heterostructure field-effect transistor
#138Strain compensation in transistors
#139Electronic device and circuit including a transistor and a variable resistor
#140Quantum dot devices with gate interface materials
#141High electron mobility transistor and method of fabrication having reduced gate length and leak current
#142Dual-operation depletion/enhancement mode high electron mobility transistor
#143Quantum dot device packages
#144Field effect transistor with controllable resistance
#145Method for preparing a p-type semiconductor layer, enhanced device and method for manufacturing the same
#146Electronic device including an enhancement-mode HEMT and a method of using the same
#147Integrated gate driver
#148METHODS FOR TRANSISTOR EPITAXIAL STACK FABRICATION
#149IC unit and method of manufacturing the same, and electronic device including the same
#150Semiconductor device including stressed source/drain, method of manufacturing the same and electronic device including the same
#151Monolithically integrated low loss passive components and associated circuitry and methods for the manufacture thereof
#152Semiconductor device
#153Quantum dot devices with trenched substrates
#154Method for manufacturing semiconductor device
#155Semiconductor structure, HEMT structure and method of forming the same
#156Hybrid high electron mobility transistor and active matrix structure
#157Semiconductor device comprising a three-dimensional field plate
#158Quantum dot array devices
#159Field effect transistor with controllable resistance
#160Transistors incorporating metal quantum dots into doped source and drain regions
#161METHODS FOR TRANSISTOR EPITAXIAL STACK FABRICATION
#162Gate patterning for quantum dot devices
#163Group III-N nanowire transistors
#164III-V nitride resonate based photoacoustic sensor
#165Quantum dot devices
#166GATE PATTERNING FOR QUANTUM DOT DEVICES
#167Strain compensation in transistors
#168Quantum dot devices with patterned gates
#169High electron mobility transistor structure
#170Surface treatment and passivation for high electron mobility transistors
#171Semiconductor device and method for forming n-type conductive channel in diamond using heterojunction
#172Enhancement-mode GaN-based HEMT device on Si substrate and manufacturing method thereof
#173Gallium nitride-based sensor having heater structure and method of manufacturing the same
#174COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE
#175High electron mobility transistor devices and method for fabricating the same
#176High electron mobility transistor devices
#177Semiconductor device and method for manufacturing the same
#178Gate arrangements in quantum dot devices
#179Quantum dot devices with overlapping gates
#180Quantum dot devices with strain control
#181Method for gallium nitride on diamond semiconductor wafer production
#182Ambipolar synaptic devices
#183Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer
#184Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
#185COMPOSITE CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
#186High-electron-mobility transistor and manufacturing method thereof
#187Semiconductor device and method for manufacturing the same
#188Trench-gated heterostructure and double-heterostructure active devices
#189Semiconductor device
#190Semiconductor devices with core-shell structures
#191High-power and high-frequency heretostructure field-effect transistor
#192Transistors with octagon waffle gate patterns
#193Forming of a MOS transistor based on a two-dimensional semiconductor material
#194Threshold adjustment for quantum dot array devices with metal source and drain
#195Nitride semiconductor device
#196Self-aligned transistor structures enabling ultra-short channel lengths
#197Field-effect semiconductor device having a heterojunction contact
#198Semiconductor device
#199Manufacturing method for high-electron-mobility transistor
#200Compound semiconductor field effect transistor gate length scaling
#201Complementary gallium nitride integrated circuits
#202Compound semiconductor substrate with SiC layer
#203Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device
#204Semiconductor device and electrical device
#205Strain compensation in transistors
#206III-V heterojunction field effect transistor
#207Fabrication of semiconductor junctions
#208HEMT-compatible lateral rectifier structure
#209Nitride structure having gold-free contact and methods for forming such structures
#210Semiconductor device and manufacturing method of semiconductor device
#211Method for selective epitaxial growth of a group III-nitride layer
#212Semiconductor device containing HEMT and MISFET and method of forming the same
#213ENHANCEMENT-MODE TRANSISTOR COMPRISING AN AlGaN/GaN HETEROJUNCTION AND A P-DOPED DIAMOND GATE
#214Semiconductor device and method of manufacturing semiconductor device
#215COMPOUND SEMICONDUCTOR DEVICE
#216Semiconductor device
#217Semiconductor device
#218Semiconductors with increased carrier concentration
#219IC unit and methond of manufacturing the same, and electronic device including the same
#220Semiconductor device, method of manufacturing the same and electronic device including the same
#221Semiconductor device, method of manufacturing the same and electronic device including the device
#222Compound semiconductor device, power supply unit, and amplifier
#223FinFETs with strained well regions
#224Integrated gate driver
#225Semiconductor structure, HEMT structure and method of forming the same
#226Techniques for forming non-planar germanium quantum well devices
#227Forming a non-planar transistor having a quantum well channel
#228FinFETs with strained well regions
#229Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
#230Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
#231Process of forming an electronic device including a multiple channel HEMT
#232FinFETs with strained well regions
#233Method for forming semiconductor structure
#234High-power and high-frequency heterostructure field-effect transistor
#235Ambipolar synaptic devices
#236Integrated circuits with selectively strained device regions and methods for fabricating same
#237Semiconductor device including a superlattice and replacement metal gate structure and related methods
#238Semiconductor device with a recessed ohmic contact and methods of fabrication
#239Electronic device including a HEMT with a segmented gate electrode
#240Methods of making multichannel devices with improved performance
#241Group III-N nanowire transistors
#242Transistors incorporating metal quantum dots into doped source and drain regions
#243Semiconductor device
#244Surface treatment and passivation for high electron mobility transistors
#245Semiconductor device including a high-electron-mobility transistor (HEMT) and method for manufacturing the same
#246Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#247Semiconductor device and method
#248FinFETs with strained well regions
#249Field effect transistor
#250High-mobility multiple-gate transistor with improved on-to-off current ratio
#251Semiconductor device and method of manufacturing same
#252High electron mobility transistor structure
#253III-NITRIDE STRUCTURES GROWN ON SILICON SUBSTRATES WITH INCREASED COMPRESSIVE STRESS
#254Semiconductor device having germanium active layer with underlying diffusion barrier layer
#255Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
#256Epitaxial buffer layers for group III-N transistors on silicon substrates
#257High-electron-mobility transistor and manufacturing method thereof
#258Semiconductor structure and manufacturing method thereof
#259Heterojunction tunnel field effect transistor fabrication using limited lithography steps
#260Conductor including nano-patterned substrate and method of manufacturing the conductor
#261Transistor, method for fabricating the same, and electronic device including the same
#262Nitride semiconductor device and manufacturing method thereof
#263Surface treatment and passivation for high electron mobility transistors
#264Apparatus and methods for forming a modulation doped non-planar transistor
#265Fabrication of semiconductor junctions
#266Deposited material and method of formation
#267Device with channel having varying carrier concentration
#268Hybrid high electron mobility transistor and active matrix structure
#269Non-planar quantum well device having interfacial layer and method of forming same
#270Hybrid high electron mobility transistor and active matrix structure
#271Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
#272Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same
#273III-N transistors with enhanced breakdown voltage
#274Semiconductor device with multiple-functional barrier layer
#275Germanium-based quantum well devices
#276Ambipolar synaptic devices
#277Semiconductor device having source field plate and method of manufacturing the same
#278FinFETs with strained well regions
#279Methods of fabricating complementary gallium nitride integrated circuits
#280Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
#281Protected sensor field effect transistors
#282III-N transistors with epitaxial layers providing steep subthreshold swing
#283Fabrication methodology for optoelectronic integrated circuits
#284Enhancement mode III-N HEMTs
#285Protected sensor field effect transistors
#286Multichannel devices with improved performance and methods of making the same
#287Semiconductor device structure and method
#288Semiconductor device containing HEMT and MISFET and method of forming the same
#289Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer
#290Group III-N nanowire transistors
#291Integrated multichannel and single channel device structure and method of making the same
#292Hybrid high electron mobility transistor and active matrix structure
#293Method for forming tunnel MOSFET with ferroelectric gate stack
#294FinFETs with strained well regions
#295High electron mobility transistor with indium nitride layer
#296Field effect transistor
#297Heterojunction-based HEMT transistor
#298Transistors, methods of forming transistors and display devices having transistors
#299Structure and formation method of FinFET device
#300Low damage passivation layer for III-V based devices