Mountain View, California
United States
152
2026-03-05
The entities that hold a legal rights for patent applications filed by inventor Petti Christopher J.:
Christopher J. Petti from Mountain View, US has applied for patents for these inventions. The list has both pending applications and granted patents:
ADDRESS PATH ROUTING REDUCTION STRATEGY FOR NONVOLATILE MEMORY DECODERS
#2 | 2026-01-01APPARATUS AND METHODS FOR REDUCING NEAR-NEAR - FAR-FAR MEMORY CELL RESISTANCE DIFFERENCES IN MEMORY ARRAYS
#3 | 2026-01-01APPARATUS AND METHODS FOR REFERENCE READ TECHNIQUES FOR THRESHOLD SELECTOR DEVICE MEMORY
#4 | 2026-01-01SELECTOR ONLY MEMORY WRITE OPERATION
#5 | 2025-12-25CIRCUIT SNAPBACK AND CHARGE DIVERSION FOR CROSS-POINT ARRAYS
#6 | 2025-12-25BIPOLAR DECODERS FOR NONVOLATILE MEMORY
#7 | 2025-12-04APPARATUS AND METHODS FOR DECODER MODULE ARCHITECTURES FOR NON-VOLATILE MEMORY
#8 | 2025-11-13DEVICE WITH EMBEDDED HIGH-BANDWIDTH, HIGH-CAPACITY MEMORY
#9 | 2025-04-03THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TRANSISTORS
#10 | 2025-01-16MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL-ALL-AROUND FERROELECTRIC MEMORY TRANSISTORS AND METHOD OF FABRICATION
#11 | 2024-11-28CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
#12 | 2024-10-31DEVICE WITH EMBEDDED HIGH-BANDWIDTH, HIGH-CAPACITY MEMORY USING WAFER BONDING
#13 | 2024-02-01Three-dimensional memory string array of thin-film ferroelectric transistors
#14 | 2023-08-17Device with embedded high-bandwidth, high-capacity memory using wafer bonding
#15 | 2023-03-16THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TRANSISTORS FORMED WITH AN OXIDE SEMICONDUCTOR CHANNEL IN A CHANNEL LAST PROCESS
#16 | 2023-03-09THREE-DIMENSIONAL NOR MEMORY STRING ARRAYS OF THIN-FILM FERROELECTRIC TRANSISTORS
#17 | 2023-01-263-dimensional memory string array of thin-film ferroelectric transistors
#18 | 2022-09-15Semiconductor memory device with write disturb reduction
#19 | 2022-07-28Quasi-volatile memory with reference bit line structure
#20 | 2022-01-27Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensional NOR memory string array
#21 | 2021-12-23Memory device including modular memory units and modular circuit units for concurrent memory operations
#22 | 2021-11-04Overwrite read methods for resistance switching memory devices
#23 | 2020-12-10OVERWRITE READ METHODS FOR MEMORY DEVICES
#24 | 2020-10-29ONE SELECTOR ONE RESISTOR MRAM CROSSPOINT MEMORY ARRAY FABRICATION METHODS
#25 | 2020-09-24Methods of forming a phase change memory with vertical cross-point structure
#26 | 2020-08-27Magnetic random-access memory with selector voltage compensation
#27 | 2020-08-13Three terminal isolation elements and methods
#28 | 2020-07-30Device with embedded high-bandwidth, high-capacity memory using wafer bonding
#29 | 2020-07-16Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same
#30 | 2020-07-14Three terminal isolation elements and methods
#31 | 2020-03-05Three dimensional ferroelectric memory
#32 | 2020-01-02Content addressable memory using threshold-adjustable vertical transistors and methods of forming the same
#33 | 2019-10-22Content addressable memory using threshold-adjustable vertical transistors and methods of forming the same
#34 | 2019-08-20Electrostatic discharge protection devices including a field-induced switching element
#35 | 2019-08-13Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
#36 | 2019-08-13Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
#37 | 2019-08-01VERTICAL 1T FERROELECTRIC MEMORY CELLS, MEMORY ARRAYS AND METHODS OF FORMING THE SAME
#38 | 2019-04-18Methods of forming a phase change memory with vertical cross-point structure
#39 | 2019-04-18Multi-state phase change memory device with vertical cross-point structure
#40 | 2019-04-18Multi-state and confined phase change memory with vertical cross-point structure
#41 | 2019-03-21Apparatus and method for identifying memory cells for data refresh based on monitor cell in a resistive memory device
#42 | 2019-02-28Non-volatile memory system with serially connected non-volatile reversible resistance-switching memory cells
#43 | 2019-02-28Process for fabricating three dimensional non-volatile memory system
#44 | 2019-02-28Memory cell for non-volatile memory system
#45 | 2018-10-04Methods and apparatus for three-dimensional nonvolatile memory
#46 | 2018-07-31Three-level ferroelectric memory cell using band alignment engineering
#47 | 2018-04-10Device with sub-minimum pitch and method of making
#48 | 2017-11-14Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof
#49 | 2017-08-31Three-dimensional memory device with vertical semiconductor bit lines located in recesses and method of making thereof
#50 | 2017-08-03Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
#51 | 2017-05-18Memory cells including vertically oriented adjustable resistance structures
#52 | 2017-02-21Memory cells including vertically oriented adjustable resistance structures
#53 | 2016-12-01Content addressable memory cells and memory arrays
#54 | 2016-09-13Silicided bit line for reversible-resistivity memory
#55 | 2016-04-14Content addressable memory cells, memory arrays and methods of forming the same
#56 | 2016-01-28Interleaved grouped word lines for three dimensional non-volatile storage
#57 | 2015-11-12Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
#58 | 2015-05-14Vertical 1T-1R memory cells, memory arrays and methods of forming the same
#59 | 2014-11-06Methods and apparatus for layout of three dimensional matrix array memory for reduced cost patterning
#60 | 2014-08-28DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMABLE AND BI-LEVEL REWRITEABLE OPERATING MODES AND METHODS OF FORMING THE SAME
#61 | 2014-06-19NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHING MATERIAL
#62 | 2014-05-15Mobile electronic device comprising an ultrathin sapphire cover plate
#63 | 2014-02-06EPITAXIAL GROWTH ON THIN LAMINA
#64 | 2014-01-30Silicon carbide lamina
#65 | 2013-11-07Method for reducing dielectric overetch when making contact to conductive features
#66 | 2013-08-08Method for fabricating backside-illuminated sensors
#67 | 2013-08-08MULTI-LAYER METAL SUPPORT
#68 | 2013-07-18Asymmetric surface texturing for use in a photovoltaic cell and method of making
#69 | 2013-05-16Nonvolatile memory cell comprising a diode and a resistance-switching material
#70 | 2013-04-11Photovoltaic Cell Comprising A Thin Lamina Having A Rear Junction And Method Of Making
#71 | 2012-09-06Dense arrays and charge storage devices
#72 | 2012-08-30Method to form a device by constructing a support element on a thin semiconductor lamina
#73 | 2012-08-16Intermetal stack for use in a photovoltaic cell
#74 | 2012-08-02Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element
#75 | 2012-07-26Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
#76 | 2012-07-05Zener diode within a diode structure providing shunt protection
#77 | 2012-05-08Method to form a device by constructing a support element on a thin semiconductor lamina
#78 | 2012-01-24Method to form a device including an annealed lamina and having amorphous silicon on opposing faces
#79 | 2011-12-15METHOD FOR REDUCING DIELECTRIC OVERETCH USING A DIELECTRIC ETCH STOP AT A PLANAR SURFACE
#80 | 2011-08-04Method for reducing dielectric overetch when making contact to conductive features
#81 | 2011-07-07Asymmetric surface texturing for use in a photovoltaic cell and method of making
#82 | 2011-06-30DENSE ARRAYS AND CHARGE STORAGE DEVICES
#83 | 2011-04-28Methods and apparatus for layout of three dimensional matrix array memory for reduced cost patterning
#84 | 2011-04-28Methods of forming pillars for memory cells using sequential sidewall patterning
#85 | 2011-03-31PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA HAVING EMITTER FORMED AT LIGHT-FACING AND BACK SURFACES
#86 | 2010-12-02Nonvolatile memory cell comprising a diode and a resistance-switching material
#87 | 2010-11-25Method for reducing dielectric overetch using a dielectric etch stop at a planar surface
#88 | 2010-11-18Three dimensional hexagonal matrix memory array
#89 | 2010-09-23Method to make electrical contact to a bonded face of a photovoltaic cell
#90 | 2010-09-16BACK-CONTACT PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA HAVING A SUPERSTRATE RECEIVER ELEMENT
#91 | 2010-09-09PHOTOVOLTAIC CELL COMPRISING AN MIS-TYPE TUNNEL DIODE
#92 | 2010-06-24Method for making a photovoltaic cell comprising contact regions doped through a lamina
#93 | 2010-06-24Photovoltaic cell comprising contact regions doped through a lamina
#94 | 2010-06-10FRONT CONNECTED PHOTOVOLTAIC ASSEMBLY AND ASSOCIATED METHODS
#95 | 2010-02-11METHOD TO MITIGATE SHUNT FORMATION IN A PHOTOVOLTAIC CELL COMPRISING A THIN LAMINA
#96 | 2010-02-11Photovoltaic cell comprising a thin lamina having a rear junction and method of making
#97 | 2010-02-11PHOTOVOLTAIC MODULE COMPRISING THIN LAMINAE CONFIGURED TO MITIGATE EFFICIENCY LOSS DUE TO SHUNT FORMATION
#98 | 2010-01-14Method to form a photovoltaic cell comprising a thin lamina
#99 | 2009-12-17Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
#100 | 2009-12-03Asymmetric surface texturing for use in a photovoltaic cell and method of making
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