Tokyo
Japan
18
2023-02-09
The entities that hold a legal rights for patent applications filed by inventor Nakano Ryu:
Ryu Nakano from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
SUBSTRATE PROCESSING METHOD AND APPARATUS
#2 | 2023-02-02METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
#3 | 2020-12-10Methods for forming doped silicon oxide thin films
#4 | 2020-06-11Methods for forming doped silicon oxide thin films
#5 | 2019-08-22Substrate processing method and apparatus
#6 | 2019-06-06Methods for forming doped silicon oxide thin films
#7 | 2018-07-26Methods for forming doped silicon oxide thin films
#8 | 2017-11-23Methods for forming doped silicon oxide thin films
#9 | 2016-07-07Methods for forming doped silicon oxide thin films
#10 | 2015-05-28Methods for forming doped silicon oxide thin films
#11 | 2015-01-15Methods for forming doped silicon oxide thin films
#12 | 2014-12-18Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
#13 | 2013-05-09Methods for forming doped silicon oxide thin films
#14 | 2009-06-18SHOWER PLATE ELECTRODE FOR PLASMA CVD REACTOR
#15 | 2007-11-22PLASMA CVD APPARATUS EQUIPPED WITH PLASMA BLOCKING INSULATION PLATE
#16 | 2007-06-21Method of forming organosilicon oxide film and multilayer resist structure
#17 | 2006-06-29Plasma processing apparatus with insulated gas inlet pore
#18 | 2006-03-02Method of forming fluorine-doped low-dielectric-constant insulating film
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