Inventor profile of:

Nicolas Daval

City:

Grenoble

Country:

France

Published Applications:

17

Last publication date:

2009-01-22

Top Assignees for applications by Nicolas Daval

The entities that hold a legal rights for patent applications filed by inventor Daval Nicolas:

Recent patent applications by Daval Nicolas

Nicolas Daval from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2009-01-22
US20090023267A1
Electricity

Method of reducing roughness of a thick insulating layer

#2 | 2008-06-05
US20080132031A1
Electricity

Method of manufacturing a semiconductor heterostructure

#3 | 2007-11-01
US20070254440A1
Electricity

Thermal oxidation of a SiGe layer and applications thereof

#4 | 2007-06-14
US20070134887A1
Electricity

Method of manufacturing a silicon dioxide layer

#5 | 2007-05-17
US20070111474A1
Electricity

Treating a SiGe layer for selective etching

#6 | 2007-05-03
US20070099399A1
Chemistry; metallurgy

Relaxation of layers

#7 | 2007-01-25
US20070020947A1
Electricity

Method of reducing roughness of a thick insulating layer

#8 | 2006-11-30
US20060270244A1
Electricity

Method of fabricating a structure with an oxide layer of a desired thickness on a Ge or SiGe substrate

#9 | 2006-07-20
US20060160328A1
Electricity

Treatment of a removed layer of silicon-germanium

#10 | 2006-06-29
US20060141748A1
Electricity

Thermal treatment of a semiconductor layer

#11 | 2006-01-19
US20060014363A1
Electricity

Thermal treatment of a semiconductor layer

#12 | 2005-11-03
US20050245049A1
Electricity

Atomic implantation and thermal treatment of a semiconductor layer

#13 | 2005-09-08
US20050196937A1
Electricity

Methods for forming a semiconductor structure

#14 | 2005-09-08
US20050196936A1
Electricity

Methods for thermally treating a semiconductor layer

#15 | 2005-09-01
US20050191825A1
Electricity

Methods for transferring a thin layer from a wafer having a buffer layer

#16 | 2005-07-28
US20050161760A1
Electricity

Schottky power diode with SiCOI substrate and process for making such diode

#17 | 2005-03-31
US20050070078A1
Electricity

Indirect bonding with disappearance of bonding layer

InventorID:

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