Inventor profile of:

Konstantin Bourdelle

City:

Crolles

Country:

France

Published Applications:

24

Last publication date:

2015-01-15

Top Assignees for applications by Konstantin Bourdelle

The entities that hold a legal rights for patent applications filed by inventor Bourdelle Konstantin:

Recent patent applications by Bourdelle Konstantin

Konstantin Bourdelle from Crolles, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-01-15
US20150014822A1
Electricity

Method of testing a semiconductor-on-insulator structure and application of said test to the fabrication of such a structure

#2 | 2014-09-25
US20140284768A1
Electricity

SEMICONDUCTOR ON INSULATOR STRUCTURE WITH IMPROVED ELECTRICAL CHARACTERISTICS

#3 | 2013-11-14
US20130302970A1
Electricity

Method of high temperature layer transfer

#4 | 2012-09-13
US20120228672A1
Electricity

Method for forming a Ge on III/V-on-insulator structure

#5 | 2011-12-01
US20110294277A1
Electricity

Methods for manufacturing multilayer wafers with trench structures

#6 | 2011-11-24
US20110287571A1
Electricity

Method of fabricating a back-illuminated image sensor

#7 | 2011-10-06
US20110241157A1
Electricity

Method for manufacturing a semiconductor substrate

#8 | 2011-07-07
US20110165758A1
Electricity

METHOD FOR MAKING A STRUCTURE COMPRISING A STEP FOR IMPLANTING IONS IN ORDER TO STABILIZE THE ADHESIVE BONDING INTERFACE

#9 | 2010-11-18
US20100289113A1
Electricity

Hybrid semiconductor substrate including semiconductor-on-insulator region and method of making the same

#10 | 2010-10-21
US20100264458A1
Electricity

Method for manufacturing heterostructures

#11 | 2009-01-15
US20090014720A1
Electricity

Method of treating interface defects in a substrate

#12 | 2008-12-11
US20080303061A1
Electricity

Substrate production method and substrate including amorphization and recrystallizing a top region

#13 | 2008-10-02
US20080237804A1
Electricity

Quality of a thin layer through high-temperature thermal annealing

#14 | 2008-05-01
US20080102601A1
Electricity

Method for producing a semiconductor substrate

#15 | 2008-01-17
US20080014714A1
Electricity

Method of fabricating a hybrid substrate

#16 | 2008-01-17
US20080014712A1
Electricity

Method for direct bonding two semiconductor substrates

#17 | 2007-12-06
US20070281445A1
Electricity

Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation

#18 | 2007-06-14
US20070134887A1
Electricity

Method of manufacturing a silicon dioxide layer

#19 | 2007-01-04
US20070000435A1
Electricity

Method of manufacturing a wafer

#20 | 2006-05-25
US20060110899A1
Electricity

Methods for fabricating a germanium on insulator wafer

#21 | 2006-05-11
US20060099779A1
Electricity

Method for transferring a thin layer including a controlled disturbance of a crystalline structure

#22 | 2006-01-19
US20060014363A1
Electricity

Thermal treatment of a semiconductor layer

#23 | 2005-11-03
US20050245049A1
Electricity

Atomic implantation and thermal treatment of a semiconductor layer

#24 | 2005-09-01
US20050188915A1
Electricity

Method of manufacturing a wafer

InventorID:

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