John Tolle

COMBINATORIAL PRECURSOR CHEMISTRY FOR LOW TEMPERATURE

CYCLIC PROCESSING METHODS FOR DEFECT REDUCTION, AND RELATED APPARATUS, DEVICES, AND PROCESSING CHAMBERS

PULSE ETCHING FOR FINFET AND GAA SOURCE/DRAIN EPI FILM GROWTH CONTROL

STRUCTURE AND METHOD OF FORMING A SILICON GERMANIUM CONTAINING LAYERED STACK FOR USE IN SEMICONDUCTOR DEVICES

EPITAXIAL GROWTH OF FULLY-STRAINED AND DEFECT-FREE CFET SUPERLATTICES USING CARBON DOPING AND LAYERED MIDDLE DIELECTRIC ISOLATION

GATE-ALL-AROUND (GAA) INTERFACE MODIFICATIONS TO IMPROVE ABRUPTNESS

UV ENERGY SOURCES FOR PROCESSING CHAMBERS, AND RELATED APPARATUS AND METHODS

INHIBITORS FOR SELECTIVE EPITAXIAL DEPOSITION

METHOD FOR DEPOSITING BORON AND GALLIUM CONTAINING SILICON GERMANIUM LAYERS

MONOLITHIC COMPLEMENTARY FIELD-EFFECT TRANSISTORS HAVING CARBON-DOPED RELEASE LAYERS

GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR SOURCE VESSEL, A GAS DISTRIBUTION SYSTEM, AND A FLANGE ASSEMBLY

METHODS OF FORMING ABRUPT INTERFACES BETWEEN SILICON-AND-CARBON-CONTAINING MATERIALS AND SILICON-AND-OXYGEN-CONTAINING MATERIALS

SEMICONDUCTOR PROCESSING APPARATUS AND METHODS FOR CALIBRATING A SEMICONDUCTOR PROCESSING APPARATUS

SUSCEPTOR IMPROVEMENT

SURFACE MODIFIERS FOR ENHANCED EPITAXIAL NUCLEATION AND WETTING

UNIFORM EPITAXIAL GROWTH OVER CRYSTALLINE TEMPLATE

METHOD AND DEVICE FOR DEPOSITING SILICON ONTO SUBSTRATES

SUBSTRATE MODIFICATION FOR SUPERLATTICE CRITICAL THICKNESS IMPROVEMENT

FLOW GUIDE STRUCTURES AND HEAT SHIELD STRUCTURES, AND RELATED METHODS, FOR DEPOSITION UNIFORMITY AND PROCESS ADJUSTABILITY

Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly

Monolithic complementary field-effect transistors having carbon-doped release layers

METHODS FOR SELECTIVE DEPOSITION UTILIZING N-TYPE DOPANTS AND/OR ALTERNATIVE DOPANTS TO ACHIEVE HIGH DOPANT INCORPORATION

Three-color 3D DRAM stack and methods of making

METHODS OF FORMATION OF A SIGE/SI SUPERLATTICE

APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER

METHOD FOR DEPOSITING A GROUP IV SEMICONDUCTOR AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

Method and device for depositing silicon onto substrates

METHOD FOR DEPOSITING BORON AND GALLIUM CONTAINING SILICON GERMANIUM LAYERS

Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation

Method for cleaning quartz epitaxial chambers

Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly

Temperature-controlled flange and reactor system including same

Method for depositing a group IV semiconductor and related semiconductor device structures

Temperature-controlled flange and reactor system including same

Pre-clean chamber and process with substrate tray for changing substrate temperature

Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber

Method for depositing a group IV semiconductor and related semiconductor device structures

Method for selectively depositing a Group IV semiconductor and related semiconductor device structures

Method for depositing a group IV semiconductor and related semiconductor device structures

APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER

Methods for forming a silicon germanium tin layer and related semiconductor device structures

Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus

Methods for forming silicon-containing epitaxial layers and related semiconductor device structures

Process for forming a film on a substrate using multi-port injection assemblies

Method and system for in situ formation of gas-phase compounds

Formation of epitaxial layers via dislocation filtering

Radial and thickness control via biased multi-port injection settings

Methods of forming silicon germanium tin films and structures and devices including the films

Methods of forming highly p-type doped germanium tin films and structures and devices including the films

Structures and devices including germanium-tin films and methods of forming same

Pre-clean chamber and process with substrate tray for changing substrate temperature

Plasma pre-clean module and process

Germanium oxide pre-clean module and process

Method and system for in situ formation of gas-phase compounds

Plasma pre-clean module and process

Methods of forming films including germanium tin and structures and devices including the films

Doped semiconductor films and processing

Tin precursors for vapor deposition and deposition processes

Hydride compounds with silicon and germanium core atoms and method of synthesizing same

Superhard dielectric compounds and methods of preparation

Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon

Superhard dielectric compounds and methods of preparation

Method for growing Si-Ge semiconductor materials and devices on substrates

Hydride compounds with silicon and germanium core atoms and method of synthesizing same

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

SiSnGeand related alloy heterostructures based on Si, Ge and Sn

Method for preparing GeSnE(E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs

Low temperature epitaxial growth of quaternary wide bandgap semiconductors