Vantaa
Finland
54
2026-01-15
The entities that hold a legal rights for patent applications filed by inventor Blomberg Tom E.:
Tom E. Blomberg from Vantaa, FI has applied for patents for these inventions. The list has both pending applications and granted patents:
SEMICONDUCTOR VAPOR ETCHING DEVICE WITH INTERMEDIATE CHAMBER
#2 | 2025-05-22SHOWERHEAD DEVICE FOR SEMICONDUCTOR PROCESSING SYSTEM
#3 | 2025-05-15THERMAL ATOMIC LAYER ETCHING PROCESSES
#4 | 2025-01-30ATOMIC LAYER ETCHING PROCESSES
#5 | 2024-10-03Showerhead device for semiconductor processing system
#6 | 2024-01-25Thermal atomic layer etching processes
#7 | 2023-11-23Thermal atomic layer etching processes
#8 | 2023-08-10Atomic layer etching processes
#9 | 2023-03-30Showerhead device for semiconductor processing system
#10 | 2023-03-16Fluorine-containing conductive films
#11 | 2022-10-06Combination CVD/ALD method, source and pulse profile modification
#12 | 2022-04-21Thermal atomic layer etching processes
#13 | 2022-04-21Thermal atomic layer etching processes
#14 | 2022-02-17Atomic layer etching processes
#15 | 2022-01-27Atomic layer deposition of III-V compounds to form V-NAND devices
#16 | 2021-03-11Photoactive devices and materials
#17 | 2021-01-21SEMICONDUCTOR VAPOR ETCHING DEVICE WITH INTERMEDIATE CHAMBER
#18 | 2021-01-21Showerhead device for semiconductor processing system
#19 | 2020-10-01Atomic layer etching processes
#20 | 2020-10-01Thermal atomic layer etching processes
#21 | 2020-10-01Thermal atomic layer etching processes
#22 | 2020-08-20DEPOSITION OF OXIDES AND NITRIDES
#23 | 2020-07-23Fluorine-containing conductive films
#24 | 2020-06-11Process for passivating dielectric films
#25 | 2020-01-09Selective deposition on metal or metallic surfaces relative to dielectric surfaces
#26 | 2020-01-02Combination CVD/ALD method, source and pulse profile modification
#27 | 2019-08-15Thermal atomic layer etching processes
#28 | 2019-08-08Atomic layer etching processes
#29 | 2019-08-08Thermal atomic layer etching processes
#30 | 2019-04-04Atomic layer deposition of antimony oxide films
#31 | 2018-07-26Photoactive devices and materials
#32 | 2018-06-28Atomic layer etching processes
#33 | 2018-06-14Thermal atomic layer etching processes
#34 | 2018-06-14Thermal atomic layer etching processes
#35 | 2018-03-08Combination CVD/ALD method, source and pulse profile modification
#36 | 2018-03-01Deposition of smooth metal nitride films
#37 | 2017-06-29Atomic layer deposition of III-V compounds to form V-NAND devices
#38 | 2017-05-18Atomic layer deposition of antimony oxide films
#39 | 2017-04-20Photoactive devices and materials
#40 | 2017-04-06Deposition of smooth metal nitride films
#41 | 2017-02-09Selective deposition on metal or metallic surfaces relative to dielectric surfaces
#42 | 2016-02-04Crystalline strontium titanate and methods of forming the same
#43 | 2015-10-22Fluorine-containing conductive films
#44 | 2015-09-03Atomic layer deposition of antimony oxide films
#45 | 2015-04-09Combination CVD/ALD method, source and pulse profile modification
#46 | 2014-09-18Silane and borane treatments for titanium carbide films
#47 | 2014-09-18Deposition of smooth metal nitride films
#48 | 2014-07-10Combination CVD/ALD method and source
#49 | 2013-05-02Crystalline strontium titanate and methods of forming the same
#50 | 2013-04-18Atomic layer deposition of antimony oxide films
#51 | 2012-10-25Process for passivating dielectric films
#52 | 2012-06-28Combination CVD/ALD method and source
#53 | 2006-07-06Method of pulsing vapor precursors in an ALD reactor
#54 | 2006-05-25Method and apparatus for measuring consumption of reactants
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