Inventor profile of:

Tom E. Blomberg

City:

Vantaa

Country:

Finland

Published Applications:

54

Last publication date:

2026-01-15

Top Assignees for applications by Tom E. Blomberg

The entities that hold a legal rights for patent applications filed by inventor Blomberg Tom E.:

Recent patent applications by Blomberg Tom E.

Tom E. Blomberg from Vantaa, FI has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-01-15
US20260018432A1
Electricity

SEMICONDUCTOR VAPOR ETCHING DEVICE WITH INTERMEDIATE CHAMBER

#2 | 2025-05-22
US20250167013A1
Electricity

SHOWERHEAD DEVICE FOR SEMICONDUCTOR PROCESSING SYSTEM

#3 | 2025-05-15
US20250154662A1
Chemistry; metallurgy

THERMAL ATOMIC LAYER ETCHING PROCESSES

#4 | 2025-01-30
US20250037970A1
Electricity

ATOMIC LAYER ETCHING PROCESSES

#5 | 2024-10-03
US20240332039A1
Electricity

Showerhead device for semiconductor processing system

#6 | 2024-01-25
US20240026548A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#7 | 2023-11-23
US20230374671A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#8 | 2023-08-10
US20230253182A1
Electricity

Atomic layer etching processes

#9 | 2023-03-30
US20230102839A1
Electricity

Showerhead device for semiconductor processing system

#10 | 2023-03-16
US20230085443A1
Electricity

Fluorine-containing conductive films

#11 | 2022-10-06
US20220316057A1
Chemistry; metallurgy

Combination CVD/ALD method, source and pulse profile modification

#12 | 2022-04-21
US20220119962A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#13 | 2022-04-21
US20220119961A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#14 | 2022-02-17
US20220051872A1
Electricity

Atomic layer etching processes

#15 | 2022-01-27
US20220028870A1
Electricity

Atomic layer deposition of III-V compounds to form V-NAND devices

#16 | 2021-03-11
US20210074865A1
Electricity

Photoactive devices and materials

#17 | 2021-01-21
US20210020469A1
Electricity

SEMICONDUCTOR VAPOR ETCHING DEVICE WITH INTERMEDIATE CHAMBER

#18 | 2021-01-21
US20210020468A1
Electricity

Showerhead device for semiconductor processing system

#19 | 2020-10-01
US20200312620A1
Electricity

Atomic layer etching processes

#20 | 2020-10-01
US20200308710A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#21 | 2020-10-01
US20200308709A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#22 | 2020-08-20
US20200263297A1
Chemistry; metallurgy

DEPOSITION OF OXIDES AND NITRIDES

#23 | 2020-07-23
US20200235037A1
Electricity

Fluorine-containing conductive films

#24 | 2020-06-11
US20200181769A1
Chemistry; metallurgy

Process for passivating dielectric films

#25 | 2020-01-09
US20200010953A1
Chemistry; metallurgy

Selective deposition on metal or metallic surfaces relative to dielectric surfaces

#26 | 2020-01-02
US20200002810A1
Chemistry; metallurgy

Combination CVD/ALD method, source and pulse profile modification

#27 | 2019-08-15
US20190249312A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#28 | 2019-08-08
US20190244786A1
Electricity

Atomic layer etching processes

#29 | 2019-08-08
US20190242019A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#30 | 2019-04-04
US20190103266A1
Electricity

Atomic layer deposition of antimony oxide films

#31 | 2018-07-26
US20180212077A1
Electricity

Photoactive devices and materials

#32 | 2018-06-28
US20180182597A1
Electricity

Atomic layer etching processes

#33 | 2018-06-14
US20180166255A1
Electricity

Thermal atomic layer etching processes

#34 | 2018-06-14
US20180163312A1
Chemistry; metallurgy

Thermal atomic layer etching processes

#35 | 2018-03-08
US20180066360A1
Chemistry; metallurgy

Combination CVD/ALD method, source and pulse profile modification

#36 | 2018-03-01
US20180061648A1
Electricity

Deposition of smooth metal nitride films

#37 | 2017-06-29
US20170186754A1
Electricity

Atomic layer deposition of III-V compounds to form V-NAND devices

#38 | 2017-05-18
US20170140918A1
Electricity

Atomic layer deposition of antimony oxide films

#39 | 2017-04-20
US20170110601A1
Electricity

Photoactive devices and materials

#40 | 2017-04-06
US20170098546A1
Electricity

Deposition of smooth metal nitride films

#41 | 2017-02-09
US20170037513A1
Chemistry; metallurgy

Selective deposition on metal or metallic surfaces relative to dielectric surfaces

#42 | 2016-02-04
US20160032489A1
Chemistry; metallurgy

Crystalline strontium titanate and methods of forming the same

#43 | 2015-10-22
US20150303101A1
Electricity

Fluorine-containing conductive films

#44 | 2015-09-03
US20150249005A1
Electricity

Atomic layer deposition of antimony oxide films

#45 | 2015-04-09
US20150099066A1
Chemistry; metallurgy

Combination CVD/ALD method, source and pulse profile modification

#46 | 2014-09-18
US20140273510A1
Electricity

Silane and borane treatments for titanium carbide films

#47 | 2014-09-18
US20140273452A1
Electricity

Deposition of smooth metal nitride films

#48 | 2014-07-10
US20140193579A1
Chemistry; metallurgy

Combination CVD/ALD method and source

#49 | 2013-05-02
US20130108877A1
Chemistry; metallurgy

Crystalline strontium titanate and methods of forming the same

#50 | 2013-04-18
US20130095664A1
Electricity

Atomic layer deposition of antimony oxide films

#51 | 2012-10-25
US20120269962A1
Chemistry; metallurgy

Process for passivating dielectric films

#52 | 2012-06-28
US20120164329A1
Chemistry; metallurgy

Combination CVD/ALD method and source

#53 | 2006-07-06
US20060147626A1
Chemistry; metallurgy

Method of pulsing vapor precursors in an ALD reactor

#54 | 2006-05-25
US20060107898A1
Chemistry; metallurgy

Method and apparatus for measuring consumption of reactants

InventorID:

198037 ⎘