Tokyo
Japan
26
2023-02-02
The entities that hold a legal rights for patent applications filed by inventor Namba Kunitoshi:
Kunitoshi Namba from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
#2 | 2022-02-10Formation of SiN thin films
#3 | 2020-12-10Methods for forming doped silicon oxide thin films
#4 | 2020-09-17Reaction chamber passivation and selective deposition of metallic films
#5 | 2020-06-11Methods for forming doped silicon oxide thin films
#6 | 2019-12-12Formation of SiN thin films
#7 | 2019-06-06Methods for forming doped silicon oxide thin films
#8 | 2019-02-21Reaction chamber passivation and selective deposition of metallic films
#9 | 2018-07-26Methods for forming doped silicon oxide thin films
#10 | 2018-03-22Reaction chamber passivation and selective deposition of metallic films
#11 | 2017-12-14Selective deposition of metallic films
#12 | 2017-11-23Methods for forming doped silicon oxide thin films
#13 | 2017-10-31Selective deposition of metallic films
#14 | 2017-10-31Reaction chamber passivation and selective deposition of metallic films
#15 | 2017-03-02Formation of SiN thin films
#16 | 2017-01-19Method for protecting layer by forming hydrocarbon-based extremely thin film
#17 | 2016-07-07Methods for forming doped silicon oxide thin films
#18 | 2015-11-05Low-oxidation plasma-assisted process
#19 | 2015-10-08Deposition of boron and carbon containing materials
#20 | 2015-05-28Methods for forming doped silicon oxide thin films
#21 | 2015-01-15Methods for forming doped silicon oxide thin films
#22 | 2013-05-09Methods for forming doped silicon oxide thin films
#23 | 2012-03-08Method of forming conformal film having si-N bonds on high-aspect ratio pattern
#24 | 2012-02-02Method of tailoring conformality of Si-containing film
#25 | 2010-04-15Method for forming metal film by ALD using beta-diketone metal complex
#26 | 2010-03-04Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
235332 ⎘