ClassID:

83985

B81C1/00555 - CPC Classification

Classification description:

Manufacture or treatment of devices or systems in or on a substrate; Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity

Sub-classes:
Recent Application in this class:
#1
20250053083
2025-02-13

MANUFACTURE OF SURFACE RELIEF STRUCTURES

#2
20240411057
2024-12-12

PROCESS FOR MANUFACTURING A THREE-DIMENSIONAL STRUCTURE IN BENDING

#3
20240297048
2024-09-05

HIGH-ASPECT RATIO METALLIZED STRUCTURES

#4
20240199413
2024-06-20

MICRO-DEVICE STRUCTURES WITH ETCH HOLES

#5
20240192483
2024-06-13

Optical device production method

#6
20230138044
2023-05-04

Optical device production method

#7
20230058578
2023-02-23

HIGH-ASPECT RATIO METALLIZED STRUCTURES

#8
20220342297
2022-10-27

Manufacture of surface relief structures

#9
20220162060
2022-05-26

Stretchable substrate and method of manufacturing the same

#10
20220112078
2022-04-14

Micro-device structures with etch holes

#11
20210278433
2021-09-09

Method for manufacturing three-dimensionally structured member, method for manufacturing acceleration pickup, acceleration pickup, and acceleration sensor

#12
20210191106
2021-06-24

Optical device production method

#13
20200363630
2020-11-19

Optical device

#14
20180143352
2018-05-24

Manufacturing method of micro-nano structure antireflective coating layer and display apparatus thereof

#15
20180086631
2018-03-29

Cavity forming method for a sensor chip, manufacturing method thereof, chip and electronics apparatus

#16
20180016136
2018-01-18

Method for manufacturing doubly re-entrant microstructures

#17
20170036905
2017-02-09

MEMS structure with an etch stop layer buried within inter-dielectric layer

#18
20160144365
2016-05-26

Etching method for forming a carrier having inward side walls in particular for confining a droplet for capillary self-assembly

#19
20150298965
2015-10-22

Aluminum nitride (AlN) devices with infrared absorption structural layer

#20
13561359
2016-09-27

Dopant selective reactive ion etching of silicon carbide