Netherlands
12
2009-09-22
12
2009-09-22
These are the the leading inventors for applications assigned to ASML Masktools B.V.:
ASML Masktools B.V. based in , NL has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Method of optical proximity correction design for contact hole mask
#2 | 2008-04-17 ✅ Patent 7,617,476 granted on 2009-11-10Method for performing pattern pitch-split decomposition utilizing anchoring features
#3 | 2008-02-21 ✅ Patent 7,710,544 granted on 2010-05-04Optimized polarization illumination
#4 | 2008-01-17 ✅ Patent 7,604,909 granted on 2009-10-20Method for improved manufacturability and patterning of sub-wavelength contact hole mask
#5 | 2007-08-23 ✅ Patent 7,804,646 granted on 2010-09-28Method for decomposition of a customized DOE for use with a single exposure into a set of multiple exposures using standard DOEs with optimized exposure settings
#6 | 2007-07-24 ✅ Patent 7,247,574 granted on 2007-07-24Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
#7 | 2007-06-28 ✅ Patent 7,667,216 granted on 2010-02-23Method of achieving CD linearity control for full-chip CPL manufacturing
#8 | 2007-05-31 ✅ Patent 7,614,034 granted on 2009-11-03Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology
#9 | 2007-02-22 ✅ Patent 7,666,554 granted on 2010-02-23Method and apparatus for performing model-based layout conversion for use with dipole illumination
#10 | 2007-01-04 ✅ Patent 7,652,758 granted on 2010-01-26Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems
#11 | 2006-09-14 ✅ Patent 7,639,864 granted on 2009-12-29Method, program product and apparatus for optimizing illumination for full-chip layer
#12 | 2006-04-06 ✅ Patent 7,620,930 granted on 2009-11-17Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
420013 ⎘